IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES D Optimal design TO-220AB - Low area specific on-resistance - Low input capacitance (C ) iss - Reduced capacitive switching losses G - High body diode ruggedness - Avalanche energy rated (UIS) S Optimal efficiency and operation D G S - Low cost N-Channel MOSFET - Simple gate drive circuitry - Low figure-of-merit (FOM): R x Q on g - Fast switching PRODUCT SUMMARY Material categorization: for definitions of compliance V (V) at T max. 550 DS J please see www.vishay.com/doc 99912 R max. () at 25 C V = 10 V 1.5 DS(on) GS APPLICATIONS Q max. (nC) 20 g Consumer electronics Q (nC) 3 gs - Displays (LCD or plasma TV) Q (nC) 5 gd Server and telecom power supplies Configuration Single - SMPS Industrial - Welding - Induction heating - Motor drives Battery chargers ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF830BPbF Lead (Pb)-free and halogen-free IRF830BPbF-BE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS Gate-source Voltage 30 V V GS Gate-source voltage AC (f > 1 Hz) 30 T = 25 C 5.3 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 3.4 A C a Pulsed drain current I 10 DM Linear derating factor 0.83 W/C b Single pulse avalanche energy E 28.8 mJ AS Maximum power dissipation P 104 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 24 J dV/dt V/ns d Reverse diode dV/dt 0.28 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 5 A DD J g AS c. 1.6 mm from case d. I I , starting T = 25 C SD D J S21-1262-Rev. C, 27-Dec-2021 Document Number: 91520 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF830B www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -1.2 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 250 A - 0.58 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 1 DS GS Zero gate boltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 2.5 A - 1.2 1.5 DS(on) GS D a Forward transconductance g V = 20 V, I = 2.5 A - 1.8 - S fs DS D Dynamic Input capacitance C - 325 - iss V = 0 V, GS Output capacitance C -3V = 100 V, 4- oss DS f = 1 MHz Reverse transfer capacitance C -6- rss pF Effective output capacitance, C -31 - o(er) b energy related V = 0 V to 400 V, V = 0 V DS GS Effective output capacitance, C -41 - c o(tr) time related Total gate charge Q -10 20 g Gate-source charge Q -3V = 10 V I = 2.5 A, V = 400 V - nC gs GS D DS Gate-drain charge Q -5- gd Turn-on delay time t -12 24 d(on) Rise time t -11 22 r V = 400 V, I = 2.5 A DD D ns R = 9.1 , V = 10 V Turn-off delay time t -1g GS 428 d(off) Fall time t -1122 f Gate input resistance R f = 1 MHz, open drain 0.8 1.7 3.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 5 S showing the A G integral reverse Pulsed diode forward current I -- 20 SM P - N junction diode S Diode forward voltage V T = 25 C, I = 4 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 320 - ns rr T = 25 C, I = I = 2.5 A, J F S Reverse recovery charge Q -1.2 - C rr dI/dt = 100 A/s, V = 20 V R Reverse recovery current I -8 - A RRM Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS c. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S21-1262-Rev. C, 27-Dec-2021 Document Number: 91520 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000