IRF9530, SiHF9530 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) -100 DS Repetitive avalanche rated Available R ( )V = -10 V 0.30 DS(on) GS P-channel Available Q max. (nC) 38 g 175 C operating temperature Q (nC) 6.8 gs Fast switching Q (nC) 21 gd Ease of paralleling Configuration Single Simple drive requirements Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 TO-220AB Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For G example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION S D Third generation power MOSFETs from Vishay provide the G D designer with the best combination of fast switching, ruggedized device design, low on-resistance and P-Channel MOSFET cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9530PbF Lead (Pb)-free SiHF9530-E3 IRF9530 SnPb SiHF9530 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -100 DS V Gate-Source Voltage V 20 GS T = 25 C - 12 C Continuous Drain Current V at - 10 V I GS D T = 100 C -8.2 A C a Pulsed Drain Current I -48 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 400 mJ AS a Repetitive Avalanche Current I -12 A AR a Repetitive Avalanche Energy E 8.8 mJ AR Maximum Power Dissipation T = 25 C P 88 W C D c Peak Diode Recovery dV/dt dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = -25 V, starting T = 25 C, L = 4.2 mH, R = 25 , I = -12 A (see fig. 12). DD J g AS c. I -12 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. S16-0754-Rev. C, 02-May-16 Document Number: 91076 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9530, SiHF9530 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - -0.10 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -80 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -7.2 A - - 0.30 DS(on) GS D b Forward Transconductance g V = -50 V, I = -7.2 A 3.7 - - S fs DS D Dynamic Input Capacitance C - 860 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 340- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -93- rss Total Gate Charge Q -- 38 g I = -12 A, V = -80 V, D DS Gate-Source Charge Q --V = -10 V 6.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --21 gd Turn-On Delay Time t -12 - d(on) Rise Time t -52 - r V = -50 V, I = -12 A, DD D ns b R = 12 ,R = 3.9, see fig. 10 g D Turn-Off Delay Time t -31- d(off) Fall Time t -39- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Gate Input Resistance R f = 1 MHz, open drain 0.4 - 3.3 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- -12 S showing the A integral reverse G p -n junction diode a Pulsed Diode Forward Current I -- -48 SM S b Body Diode Voltage V T = 25 C, I = -12 A, V = 0 V -- -6.3 V SD J S GS Body Diode Reverse Recovery Time t - 120 240 ns rr b T = 25 C, I = -12 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.46 0.92 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. C, 02-May-16 Document Number: 91076 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000