IRF9540 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating TO-220AB Available Repetitive avalanche rated P-channel Available G 175 C operating temperature Fast switching Ease of paralleling S Simple drive requirements D G D Material categorization: for definitions of compliance P-Channel MOSFET please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For PRODUCT SUMMARY example, parts with lead (Pb) terminations are not RoHS-compliant. V (V) -100 DS Please see the information / tables in this datasheet for details R ()V = -10 V 0.20 DS(on) GS DESCRIPTION Q max. (nC) 61 g Q (nC) 14 Third generation power MOSFETs from Vishay provide the gs designer with the best combination of fast switching, Q (nC) 29 gd ruggedized device design, low on-resistance and Configuration Single cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9540PbF Lead (Pb)-free and halogen-free IRF9540PbF-BE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -100 DS V Gate-source voltage V 20 GS T = 25 C -19 C Continuous drain current V at 10 V I GS D T = 100 C -13 A C a Pulsed drain current I -72 DM Linear derating factor 1.0 W/C b Single pulse avalanche energy E 640 mJ AS a Repetitive avalanche current I -19 A AR a Repetitive avalanche energy E 15 mJ AR Maximum power dissipation T = 25 C P 150 W C D c Peak diode recovery dV/dt dV/dt -5.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = -25 V, starting T = 25 C, L = 2.7 mH, R = 25 , I = -19 A (see fig. 12) DD J g AS c. I -19 A, dI/dt 200 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0852-Rev. C, 16-Aug-2021 Document Number: 91078 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9540 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = -1 mA - -0.087 - V/C DS DS J D Gate-source threshold voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero gate voltage drain current I A DSS V = -80 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-source on-state resistance R V = -10 V I = -11 A - - 0.20 DS(on) GS D b Forward transconductance g V = -50 V, I = -11 A 6.2 - - S fs DS D Dynamic Input capacitance C - 1400 - iss V = 0 V, GS Output capacitance C -V = -25 V, 590- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -140- rss Total gate charge Q -- 61 g I = -19 A, V = -80 V, D DS Gate-source charge Q --V = -10 V 14 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --29 gd Turn-on delay time t -16 - d(on) Rise time t -73 - r V = -50 V, I = -19 A, DD D ns b R = 9.1 , R = 2.4 , see fig. 10 Turn-off delay time t -3g D 4- d(off) Fall time t -57- f Gate input resistance R f = 1 MHz, open drain 0.3 - 1.6 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- -19 S showing the A G integral reverse a Pulsed diode forward current I S -- -72 p - n junction diode SM b Body diode voltage V T = 25 C, I = -19 A, V = 0 V -- -5.0 V SD J S GS Body diode reverse recovery time t - 130 260 ns rr b T = 25 C, I = -19 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.35 0.70 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0852-Rev. C, 16-Aug-2021 Document Number: 91078 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000