IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) -60 DS Repetitive avalanche rated Available R ( )V = -10 V 0.14 P-channel DS(on) GS Available 175 C operating temperature Q max. (nC) 34 g Fast switching Q (nC) 9.9 gs Ease of paralleling Q (nC) 16 gd Simple drive requirements Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S Note * This datasheet provides information about parts that are TO-220AB RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. G Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the S designer with the best combination of fast switching, D D G ruggedized device design, low on-resistance and P-Channel MOSFET cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z34PbF Lead (Pb)-free SiHF9Z34-E3 IRF9Z34 SnPb SiHF9Z34 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -18 C Continuous Drain Current V at -10 V I GS D T = 100 C -13 A C a Pulsed Drain Current I -72 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 370 mJ AS a Repetitive Avalanche Current I -18 A AR a Repetitive Avalanche Energy E 8.8 mJ AR Maximum Power Dissipation T = 25 C P 88 W C D c Peak Diode Recovery dV/dt dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = -25 V, starting T = 25 C, L = 1.3 mH, R = 25 , I = -18 A (see fig. 12). DD J g AS c. I -18 A, dI/dt 170 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. S16-0754-Rev. C, 02-May-16 Document Number: 91092 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = -1 mA - -0.060 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -48 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -11 A - - 0.14 DS(on) GS D b Forward Transconductance g V = -25 V, I = -11 A 5.9 - - S fs DS D Dynamic Input Capacitance C - 1100 - iss V = 0 V, GS Output Capacitance C -6V = -25 V, 20- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -100- rss Total Gate Charge Q -- 34 g I = -1 8 A, D Gate-Source Charge Q --V = -10 V V = -48 V, 9.9 nC gs GS DS b see fig. 6 and 13 Gate-Drain Charge Q --16 gd Turn-On Delay Time t -18 - d(on) Rise Time t -120 - r V = -30 V, I = -18 A, DD D ns b Turn-Off Delay Time t -20- R = 12 , R = 1.5, see fig. 10 d(off) g D Fall Time t -58- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Gate Input Resistance R f = 1 MHz, open drain 0.7 - 3.9 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- -18 S showing the A G integral reverse a Pulsed Diode Forward Current I -- -72 SM p -n junction diode S b Body Diode Voltage V T = 25 C, I = -18 A, V = 0 V -- -6.3 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = -18 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.28 0.52 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. C, 02-May-16 Document Number: 91092 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000