IRFB11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g TO-220AB Available requirement Improved gate, avalanche, and dynamic dV/dt Available ruggedness G Fully characterized capacitance and avalanche voltage and current S Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 G S Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY V (V) 500 DS APPLICATIONS R ()V = 10 V 0.52 DS(on) GS Switch mode power supply (SMPS) Q max. (nC) 52 g Uninterruptible power supply Q (nC) 13 gs High speed power switching Q (nC) 18 gd Configuration Single APPLICABLE OFF LINE SMPS TOPOLOGIES Two transistor forward Half and full bridge Power factor correction boost ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRFB11N50APbF Lead (Pb)-free and halogen-free IRFB11N50APbF-BE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 11 C Continuous drain current V at 10 V I GS D T = 100 C 7.0 A C a Pulsed drain current I 44 DM Linear derating factor 1.3 W/C b Single pulse avalanche energy E 275 mJ AS a Repetitive avalanche current I 11 A AR a Repetitive avalanche energy E 17 mJ AR Maximum power dissipation T = 25 C P 170 W C D c Peak diode recovery dV/dt dV/dt 6.9 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 4.5 mH, R = 25 , I = 11 A (see fig. 12) J G AS c. I 11 A, dI/dt 140 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0867-Rev. C, 16-Aug-2021 Document Number: 91094 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFB11N50A www.vishay.com Vishay Siliconix THERMAL RESISTANCE PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -0.75 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 6.6 A - - 0.52 DS(on) GS D Forward transconductance g V = 50 V, I = 6.6 A 6.1 - - S fs DS D Dynamic Input capacitance C - 1423 - iss V = 0 V, GS Output capacitance C -V = 25 V, 208- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -8.1- rss pF V = 1.0 V, f = 1.0 MHz - 2000 - DS Output capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz - 55 - GS DS Effective output capacitance C eff. V = 0 V to 400 V - 97 - oss DS Total gate charge Q -- 52 g I = 11 A, V = 400 V D DS Gate-source charge Q --V = 10 V 13 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --18 gd Turn-on delay time t -14 - d(on) Rise time t -35 - r V = 250 V, I = 11 A DD D ns b R = 9.1 , R = 22 , see fig. 10 Turn-off delay time t -3G D 2- d(off) Fall time t -28- f Gate input resistance R f = 1 MHz, open drain 0.5 - 3.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 11 S showing the A G integral reverse a Pulsed diode forward current I -- 44 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 11 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 510 770 ns rr b T = 25 C, I = 11 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -3.4 5.1 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. C effective is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss oss DS DS S21-0867-Rev. C, 16-Aug-2021 Document Number: 91094 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000