IRFR110, SiHFR110 www.vishay.com Vishay Siliconix Power MOSFET D FEATURES Dynamic dV/dt rating DPAK (TO-252) Repetitive avalanche rated Surface-mount (IRFR110, SiHFR110) D Available in tape and reel G Fast switching Available Ease of paralleling S Material categorization: for definitions of compliance S G please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the V (V) 100 designer with the best combination of fast switching, DS ruggedized device design, low on-resistance and R ()V = 10 V 0.54 DS(on) GS cost-effectiveness. Q max. (nC) 8.3 g The DPAK is designed for surface mounting using vapor Q (nC) 2.3 gs phase, infrared, or wave soldering techniques. Power Q (nC) 3.8 gd dissipation levels up to 1.5 W are possible in typical surface Configuration Single mount applications. ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR110-GE3 SiHFR110TRL-GE3 SiHFR110TR-GE3 SiHFR110TRR-GE3 a a Lead (Pb)-free IRFR110PbF IRFR110TRLPbF IRFR110TRPbF - ab ab ab Lead (Pb)-free and halogen-free IRFR110PbF-BE3 IRFR110TRLPbF-BE3 IRFR110TRPbF-BE3 Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 4.3 C Continuous drain current V at 10 V I GS D T = 100 C 2.7 A C a Pulsed drain current I 17 DM Linear derating factor 0.20 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 75 mJ AS a Repetitive avalanche current I 4.3 A AR a Repetitive avalanche energy E 2.5 mJ AR Maximum power dissipation T = 25 C 25 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 8.1 mH, R = 25 , I = 4.3 A (see fig. 12) DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0466-Rev. G, 17-May-2021 Document Number: 91265 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR110, SiHFR110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R - 110 thJA a Maximum junction-to-ambient (PCB mount) R -50 C/W thJA Maximum junction-to-case (drain) R -5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 2.6 A -- 0.54 DS(on) GS D Forward transconductance g V = 50 V, I = 2.6 A 1.6 - - S fs DS D Dynamic Input capacitance C -180 - iss V = 0 V, GS Output capacitance C -8V = 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 8.3 g I = 5.6 A, V = 80 V, D DS Gate-source charge Q --V = 10 V 2.3 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --3.8 gd Turn-on delay time t -6.9 - d(on) Rise time t -16 - r V = 50 V, I = 5.6 A, DD D ns b R = 24 , R = 8.4 , see fig. 10 Turn-off delay time t -1g D 5- d(off) Fall time t -9.4- f Internal drain inductance R f = 1 MHz, open drain 2.5 - 11.6 g D Internal source inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center of G Input capacitance L -7.5 - S die contact S Drain-source body diode characteristics MOSFET symbol Continuous source-drain diode current I -- 4.3 D S showing the A integral reverse G a Pulsed diode forward current I -- 17 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 4.3 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 100 200 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.44 0.88 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0466-Rev. G, 17-May-2021 Document Number: 91265 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000