IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface mount (IRFR9014, SiHFR9014) G D Straight lead (IRFU9014, SiHFU9014) D Available in tape and reel Available P-channel S G S Fast switching D G D Material categorization: for definitions of compliance P-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, V (V) -60 DS ruggedized device design, low on-resistance and R ()V = -10 V 0.50 DS(on) GS cost-effectiveness. Q max. (nC) 12 g The DPAK is designed for surface mounting using vapor Q (nC) 3.8 gs phase, infrared, or wave soldering techniques. The straight Q (nC) 5.1 lead version (IRFU, SiHFU series) is for through-hole gd mounting applications. Power dissipation levels up to 1.5 W Configuration Single are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a SiHFR9014-GE3 SiHFR9014TRL-GE3 SiHFR9014TR-GE3 SiHFU9014-GE3 Lead (Pb)-free and halogen-free IRFR9014PbF-BE3 IRFR9014TRLPbF-BE3 IRFR9014TRPbF-BE3 - a a Lead (Pb)-free IRFR9014PbF IRFR9014TRLPbF IRFR9014TRPbF IRFU9014PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS T = 25 C -5.1 C Continuous drain current V at 5 V I GS D T = 100 C -3.2 A C a Pulsed drain current I -20 DM Linear derating factor 0.20 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 140 mJ AS a Repetitive avalanche current I -5.1 A AR a Repetitive avalanche energy E 2.5 mJ AR Maximum power dissipation T = 25 C 25 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt -4.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = - 25 V, starting T = 25 C, L = 6.3 mH, R = 25 , I = - 5.1 A (see fig. 12) DD J g AS c. I - 6.7 A, dI/dt 90 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0771-Rev. F, 19-Jul-2021 Document Number: 91277 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R - - 110 thJA Maximum junction-to-ambient R -- 50 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -- 5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = - 250 A -60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = -1 mA - -0.059 - V/C DS DS J D Gate-source threshold voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - -100 DS GS Zero gate voltage drain current I A DSS V = -48 V, V = 0 V, T = 125 C - - -500 DS GS J b Drain-source on-state resistance R V = -10 V I = -3.1 A - - 0.50 DS(on) GS D b Forward transconductance g V = -25 V, I = -3.1 A 1.4 - - S fs DS D Dynamic Input capacitance C - 270 - iss V = 0 V, GS Output capacitance C -V = -25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -31- rss Total gate charge Q -- 12 g I = -6.7 A, V = -48 V, D DS Gate-source charge Q --V = - 10 V 3.8 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --5.1 gd Turn-on delay time t -11 - d(on) Rise time t -63 - r V = -30 V, I = -6.7 A, DD D ns b R = 24 , R = 4.0 , see fig. 10 g D Turn-off delay time t -9.6- d(off) Fall time t -31- f D Internal drain inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L -7.5 - S c die contact S Drain-Source Body Diode Characteristics D Continuous source-drain diode current I MOSFET symbol -- -5.1 S showing the A G a integral reverse Pulsed diode forward current I -- -20 SM S p - n junction diode b Body diode voltage V T = 25 C, I = -5.1 A, V = 0 V -- -5.5 V SD J S GS Body diode reverse recovery time t - 80 160 ns rr b T = 25 C, I = -6.7 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.096 0.19 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0771-Rev. F, 19-Jul-2021 Document Number: 91277 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000