IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) G Surface-mount (IRFR9024, SiHFR9024) D D Straight lead (IRFU9024, SiHFU9024) Available Available in tape and reel S P-channel G S D G D Fast switching P-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION V (V) -60 DS Third generation power MOSFETs from Vishay provide the R ()V = -10 V 0.28 DS(on) GS designer with the best combination of fast switching, Q (Max.) (nC) 19 ruggedized device design, low on-resistance and g cost-effectiveness. Q (nC) 5.4 gs The DPAK is designed for surface mounting using vapor Q (nC) 11 gd phase, infrared, or wave soldering techniques. The straight Configuration Single lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a a SiHFR9024-GE3 SiHFR9024TR-GE3 SiHFR9024TRL-GE3 SiHFR9024TRR-GE3 SiHFU9024-GE3 Lead (Pb)-free and halogen-free IRFR9024PbF-BE3 IRFR9024TRPbF-BE3 IRFR9024TRLPbF-BE3 - a a Lead (Pb)-free IRFR9024PbF IRFR9024TRPbF IRFR9024TRLPbF - IRFU9024PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS T = 25 C -8.8 C Continuous drain current V at -10 V I GS D T = 100 C -5.6 A C a Pulsed drain current I -35 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 300 mJ AS a Repetitive avalanche current I -8.8 A AR a Repetitive avalanche energy E 5.0 mJ AR Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt -4.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = - 25 V, starting T = 25 C, L = 4.5 mH, R = 25 , I = - 8.8 A (see fig. 12) DD J g AS c. I - 11 A, dI/dt 140 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0771-Rev. E, 19-Jul-2021 Document Number: 91278 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 110 thJA Maximum junction-to-ambient R -- 50 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A - 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - - 0.063 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = - 60 V, V = 0 V - - - 100 DS GS Zero gate voltage drain current I A DSS V = - 48 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-source on-state resistance R V = - 10 V I = - 5.3 A - - 0.28 DS(on) GS D Forward transconductance g V = - 25 V, I = - 5.3 A 2.9 - - S fs DS D Dynamic Input capacitance C - 570 - iss V = 0 V, GS Output capacitance C -V = - 25 V, 360- pF oss DS f = 1.0 MHz Reverse transfer capacitance C -65- rss Total gate charge Q -- 19 g I = - 11 A, V = - 48 V, D DS Gate-source charge Q --V = - 10 V 5.4 nC gs GS b see fig. 6 and 13 --11 Gate-drain charge Q gd Turn-on delay time t -13 - d(on) Rise time t -68 - r V = - 30 V, I = - 11 A, DD D ns b R = 18 , R = 2.5 , see fig. 10 g D Turn-off delay time t -15- d(off) Fall time t -29- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- - 8.8 S showing the A G integral reverse a Pulsed diode forward current I -- - 35 SM p - n junction diode S b Body diode voltage V T = 25 C, I = - 8.8 A, V = 0 V -- - 6.3 V SD J S GS Body diode reverse recovery time t - 100 200 ns rr b T = 25 C, I = - 11 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.32 0.64 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0771-Rev. E, 19-Jul-2021 Document Number: 91278 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000