IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR9120, SiHFR9120) G D D Straight lead (IRFU9120, SiHFU9120) Available in tape and reel Available P-channel S G S D Fast switching G D Material categorization: for definitions of compliance P-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the V (V) -100 DS designer with the best combination of fast switching, R ()V = -10 V 0.60 DS(on) GS ruggedized device design, low on-resistance and Q (Max.) (nC) 18 cost-effectiveness. g Q (nC) 3.0 The DPAK is designed for surface mounting using vapor gs phase, infrared, or wave soldering techniques. The straight Q (nC) 9.0 gd lead version (IRFU, SiHFU series) is for through-hole Configuration Single mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a SiHFR9120-GE3 SiHFR9120TR-GE3 SiHFR9120TRL-GE3 - SiHFU9120-GE3 Lead (Pb)-free and halogen-free IRFR9120PbF-BE3 IRFR9120TRPbF-BE3 IRFR9120TRLPbF-BE3 - - a a Lead (Pb)-free IRFR9120PbF IRFR9120TRPbF IRFR9120TRLPbF IRFR9120TRRPbF IRFU9120PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -100 DS V Gate-source voltage V 20 GS T = 25 C -5.6 C Continuous drain current V at -10 V I GS D T = 100 C -5.6 A C a Pulsed drain current I -22 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 210 mJ AS a Repetitive avalanche current I -5.6 A AR a Repetitive avalanche energy E 4.2 mJ AR Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt -5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = -25 V, starting T = 25 C, L = 10 mH, R = 25 , I = - 5.6 A (see fig. 12) DD J g AS c. I - 6.8 A, dI/dt 110 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0818-Rev. D, 02-Aug-2021 Document Number: 91280 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 110 thJA Maximum junction-to-ambient R -- 50 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = - 250 A - 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = - 1 mA - - 0.098 - V/C DS DS J D Gate-source threshold voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - - 100 DS GS Zero gate voltage drain current I A DSS V = -80 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-source on-state resistance R V = -10 V I = - 3.4 A - - 0.60 DS(on) GS D Forward transconductance g V = - 50 V, I = - 3.4 A 1.5 - - S fs DS D Dynamic Input capacitance C - 390 - iss V = 0 V, GS Output capacitance C -V = - 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -45- rss Total gate charge Q -- 18 g I = - 6.8 A, V = - 80 V, D DS Gate-source charge Q --V = - 10 V 3.0 nC gs GS b see fig. 6 and 13 --9.0 Gate-drain charge Q gd Turn-on delay time t -9.6 - d(on) Rise time t -29 - r V = - 50 V, I = - 6.8 A, DD D ns b R = 18 , R = 7.1 , see fig. 10 g D Turn-off delay time t -21- d(off) Fall time t -25- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- - 5.6 S showing the A integral reverse G a Pulsed diode forward current I -- - 22 SM p - n junction diode S b Body diode voltage V T = 25 C, I = - 5.6 A, V = 0 V -- - 6.3 V SD J S GS Body diode reverse recovery time t - 100 200 ns rr b T = 25 C, I = - 6.8 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.33 0.66 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0818-Rev. D, 02-Aug-2021 Document Number: 91280 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000