IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Extremely Low R DS(on) V (V) 50 DS Compact Plastic Package R ( )V = 10 V 0.10 DS(on) GS Fast Switching Q (Max.) (nC) 17 g Low Drive Current Q (nC) 9.0 gs Ease of Paralleling Q (nC) 3.0 gd Excellent Temperature Stability Configuration Single Parts Per Million Quality Compliant to RoHS Directive 2002/95/EC D TO-220AB DESCRIPTION The technology has expanded its product base to serve the low voltage, very low R MOSFET transistor DS(on) requirements. Vishays highly efficient geometry and G unique processing have been combined to create the lowest on resistance per device performance. In addition to this S feature all have documented reliability and parts per million D G quality S The transistor also offer all of the well established N-Channel MOSFET advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and in systems that are operated from low voltage batteries, such as automotive, portable equipment, etc. ORDERING INFORMATION Package TO-220AB IRFZ20PbF Lead (Pb)-free SiHFZ20-E3 IRFZ20 SnPb SiHFZ20 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT a Drain-Source Voltage V 50 DS V a Gate-Source Voltage V 20 GS T = 25 C 15 C Continuous Drain Current V at 10 V I GS D T = 100 C 10 A C b Pulsed Drain Current I 60 DM c Single Pulse Avalanche Energy E 5mJ AS Linear Derating Factor (see fig. 16) 0.32 W/C Maximum Power Dissipation (see fig. 16) T = 25 C P 40 W C D Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C Soldering Recommendations (Peak Temperature) for 10 s 300 (0.063 (1.6 mm) from case Notes a. T = 25 C to 150 C J b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11). c. Starting T = 25 C, L = 0.07 mH, R = 25 , I = 12 A J g AS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91340 www.vishay.com S10-1682-Rev. A, 26-Jul-10 1IRFZ20, SiHFZ20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Typical Socket Mount, Junction-to-Ambient R -80 thJA Case-to-Sink, Mounting Surface Flat, Smooth, and Greased R 1.0 - C/W thCS Junction-to-Case R -3.12 thJC ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 50 - - V DS GS D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 500 nA GSS GS V > Max. Rating, V = 0 V - - 250 DS GS Zero Gate Voltage Drain Current I A DSS V = Max. Rating x 0.8, V = 0 V, DS GS - - 1000 T = 125 C C On-State Drain Current I V = 10 V V > I x R max. - - 15 A D(on) GS DS D(on) DS(on) b Drain-Source On-State Resistance R V = 10 V I = 10 A - 0.080 0.10 DS(on) GS D b Forward Transconductance g V > I x R max., I = 9.0 A 5.0 6.0 - S fs DS D(on) DS(on) D Dynamic Input Capacitance C - 560 860 iss V = 0 V, GS Output Capacitance C -V = 25 V, 250350 pF oss DS f = 1.0 MHz, see fig. 11 Reverse Transfer Capacitance C -60100 rss I = 20 A, V = 0.8 max. D DS Total Gate Charge Q -12 17 g rating, see fig. 18 for test Gate-Source Charge Q -9V = 10 V circuit (Gate charge is .0- nC gs GS essentially independent of Gate-Drain Charge Q -3.0- gd operating temperature) Turn-On Delay Time t -15 30 d(on) Rise Time t -45 90 r V = 25 V, I = 9.0 A, DD D ns b Z = 50 , see fig. 5 0 Turn-Off Delay Time t -2040 d(off) Fall Time t -1530 f D Modified MOSFET Internal Drain Inductance L -3.5 - D symbol showing the nH internal device G inductances Internal Source Inductance L -4.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 15 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 60 SM S p - n junction rectifier b Body Diode Voltage V T = 25 C, I = 15 A, V = 0 V - - 1.5 V SD C S GS Body Diode Reverse Recovery Time t - 100 - ns rr T = 150 C, I = 15 A, dI /dt = 100 A/s J F F Body Diode Reverse Recovery Charge Q -0.4 - C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5). b. Pulse test: Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91340 2 S10-1682-Rev. A, 26-Jul-10