IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 200 V DS Available Repetitive Avalanche Rated R ()V = 5 V 0.40 DS(on) GS RoHS* Logic Level Gate Drive COMPLIANT Q (Max.) (nC) 40 g R Specified at V = 4 V and 5 V DS(on) GS Q (nC) 5.5 gs 150 C Operating Temperature Q (nC) 24 gd Fast Switching Configuration Single Ease of Paralleling D Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all S D commercial-industrial applications at power dissipation G S levels to approximately 50 W. The low thermal resistance N-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRL630PbF Lead (Pb)-free SiHL630-E3 IRL630 SnPb SiHL630 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT 200 Drain-Source Voltage V DS V Gate-Source Voltage V 10 GS T = 25 C 9.0 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 5.7 A C a Pulsed Drain Current I 36 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 250 mJ AS a Repetitive Avalanche Current I 9.0 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 4.6 mH, R = 25 , I = 9.0 A (see fig. 12). DD J g AS c. I 9.0 A, dV/dt 120 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91303 www.vishay.com S11-0519-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRL630, SiHL630 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - GS(th) DS GS D 2.0 V Gate-Source Leakage I V = 10 -- 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 160 V, V = 0 V, T = 125 C - - DS GS J 250 b V = 5.0 V I = 5.4 A -- 0.40 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 4.5 A -- 0.50 GS D b Forward Transconductance g V = 50 V, I = 5.4 A 4.8 - - fs DS D S Dynamic V = 0 V Input Capacitance C - 1100 - GS iss Output Capacitance C -V = 25 V 220- pF oss DS Reverse Transfer Capacitance C -7f = 1.0 MHz, see fig. 5 0- rss Total Gate Charge Q -- 40 g I = 9.0 A, V = 160 V, D DS Gate-Source Charge Q --V = 10 V 5.5 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --24 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -57 - r V = 100 V, I = 9.0 A DD D ns b R = 6.0 , R = 11 , see fig. 10 g D Turn-Off Delay Time t -38- d(off) Fall Time t -33- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D -- 9.0 Continuous Source-Drain Diode Current I S showing the A integral reverse G a Pulsed Diode Forward Current I -- 36 SM S p - n junction diode b Body Diode Voltage V -- SD T = 25 C, I = 9.0 A, V = 0 V 2.0 V J S GS Body Diode Reverse Recovery Time t - rr 230 350 ns b T = 25 C, I = 9.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 1.7 2.6 C Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91303 2 S11-0519-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000