IRLZ14, SiHLZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 60 DS Available Logic-Level Gate Drive R ()V = 5.0 V 0.20 DS(on) GS RoHS* Q (Max.) (nC) 8.4 R Specified at V = 4 V and 5 V g DS(on) GS COMPLIANT Q (nC) 3.5 gs 175 C Operating Temperature Q (nC) 6.0 gd Fast Switching Configuration Single Ease of Paralleling D Simple Drive Requirements TO-220AB Compliant to RoHS Directive 2002/95/EC DESCRIPTION G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and D cost-effectiveness. G S The TO-220AB package is universally preferred for all N-Channel MOSFET commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRLZ14PbF Lead (Pb)-free SiHLZ14-E3 IRLZ14 SnPb SiHLZ14 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 10 GS T = 25 C 10 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 7.2 A C a Pulsed Drain Current I 40 DM Linear Derating Factor 0.29 W/C b Single Pulse Avalanche Energy E 39.5 mJ AS Maximum Power Dissipation T = 25 C P 43 W C D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 0.79 mH, R = 25 , I = 10 A (see fig. 12). DD J g AS c. I 10 A, dI/dt 90 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91325 www.vishay.com S11-0519-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLZ14, SiHLZ14 Vishay Siliconix THERMAL RESISTANCE PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 62 thJA Case-to-Sink, Flat, Greased Surface R -0.50- C/W thCS Maximum Junction-to-Case (Drain) R -- 3.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V /T - 0.070 - V Temperature Coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5.0 V I = 6.0 A - - 0.20 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 5.0 A - - 0.28 GS D b Forward Transconductance g V = 25 V, I = 6.0 A 3.5 - - S fs DS D Dynamic Input Capacitance C -400 - iss V = 0 V, GS Output Capacitance C -1V = 25 V, 70- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -42- rss Total Gate Charge Q -- 8.4 g I = 10 A, V = 48 V D DS Gate-Source Charge Q --V = 5.0 V 3.5 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --6.0 gd Turn-On Delay Time t -9.3 - d(on) Rise Time t -110 - V = 30 V, I = 10 A r DD D ns R = 12 , R = 2.8 g D Turn-Off Delay Time t -17- d(off) b see fig. 10 Fall Time t -26- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 10 S showing the A G integral reverse a Pulsed Diode Forward Current I S -- 40 SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 93 130 ns rr T = 25 C, I = 10 A, J F b dI/dt = 100 A/s Body Diode Reverse Recovery Charge Q - 0.34 0.65 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91325 2 S11-0519-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000