LL101A, LL101B, LL101C www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications Integrated protection ring against static discharge DESIGN SUPPORT TOOLS click logo to get started Low capacitance Low leakage current Models Available This diode is also available in the DO-35 (DO-204AH) case with type designation SD101A, SD101B, SD101C and in MECHANICAL DATA the SOD-123 case with type designation SD101AW, Case: MiniMELF (SOD-80) SD101BW, SD101CW Weight: approx. 31 mg AEC-Q101 qualified Cathode band color: black Material categorization: for definitions of compliance Packaging codes/options: please see www.vishay.com/doc 99912 GS18/10K per 13 reel (8 mm tape), 10K/box APPLICATIONS GS08/2.5K per 7 reel (8 mm tape), 12.5K/box HF-detector Protection circuit Diode for low currents wits a low supply voltage Small battery charger Power supplies DC/DC converter for notebooks PARTS TABLE CIRCUIT PART TYPE DIFFERENTIATION ORDERING CODE REMARKS CONFIGURATION LL101A V = 60 V, V at I = 1 mA max. 410 mV LL101A-GS18 or LL101A-GS08 Single Tape and reel R F F LL101B V = 50 V, V at I = 1 mA max. 400 mV LL101B-GS18 or LL101B-GS08 Single Tape and reel R F F LL101C V = 40 V, V at I = 1 mA max. 390 mV LL101C-GS18 or LL101C-GS08 Single Tape and reel R F F ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT LL101A V 60 V RRM Reverse voltage LL101B V 50 V RRM LL101C V 40 V RRM (1) Power dissipation (infinite heatsink) P 400 mW tot Forward continuous current I 30 mA F Maximum single cycle surge 10 s square wave I 2A FSM Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.5, 01-Jun-17 Document Number: 85626 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000LL101A, LL101B, LL101C www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg On PC board Thermal resistance junction to ambient air R 320 K/W thJA 50 mm x 50 mm x 1.6 mm ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LL101A V 60 V (BR) Reverse Breakdown Voltage I = 10 A LL101B V 50 V R (BR) LL101C V 40 V (BR) V = 50 V LL101A I 200 nA R R Leakage current V = 40 V LL101B I 200 nA R R V = 30 V LL101C I 200 nA R R I = 1 mA LL101A V 0.410 V F F I = 1 mA LL101B V 0.400 V F F I = 1 mA LL101C V 0.390 V F F Forward voltage drop LL101A V 1000 mV F I = 15 mA LL101B V 950 mV F F LL101C V 900 mV F V = 0 V, f = 1 MHz LL101A C 2.0 pF R D Diode capacitance LL101B C 2.1 pF D V = 0 V, f = 1 MHz R LL101C C 2.2 pF D Reverse recovery time I = I = 5 mA, recover to 0.1 I t 1ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb gll101a 02 gll101a 01 Fig. 2 - Typ. I of Combination Schottky Barrier and PN Junction F Fig. 1 - Typ. I vs. V for Primary Conduction through the Schottky F F Guard Ring Barrier Rev. 1.5, 01-Jun-17 Document Number: 85626 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000
