LL103A, LL103B, LL103C www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 APPLICATIONS Models Available HF-detector MECHANICAL DATA Protection circuit Case: MiniMELF (SOD-80) Small battery charger Weight: approx. 31 mg AC/DC / DC/DC converters Cathode band color: black Packaging codes/options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS LL103A V = 40 V LL103A-GS08 or LL103A-GS18 Single Tape and reel R LL103B V = 30 V LL103B-GS08 or LL103B-GS18 Single Tape and reel R LL103C V = 20 V LL103C-GS08 or LL103C-GS18 Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT LL103A V 40 V R Reverse voltage LL103B V 30 V R LL103C V 20 V R Forward continuous current I 200 mA FAV Peak forward surge current t = 300 s, square pulse I 15 A p FSM Power dissipation P 400 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Thermal resistance junction to ambient air R 250 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg Rev. 1.8, 01-Jun-17 Document Number: 85630 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000LL103A, LL103B, LL103C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LL103A V 40 V (BR) Reverse breakdown voltage I = 50 A LL103B V 30 V R (BR) LL103C V 20 V (BR) V = 30 V LL103A I 5A R R Leakage current V = 20 V LL103B I 5A R R V =10 V LL103C I 5A R R I = 20 mA V 370 mV F F Forward voltage drop I = 200 mA V 600 mV F F Diode capacitance V = 0 V, f = 1 MHz C 50 pF R D I = I = 50 mA to 200 mA, F R Reverse recovery time t 10 ns rr recover to 0.1 I R TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 10 000 100 1000 10 1 100 Reverse voltage 0.1 LL103A V = 30 V R 10 LL103B V = 20 V R 0.01 LL103C V = 10 V R 1 0.001 0 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 120 140 160 16767 1 T - Junction Temperature (C) j 16765 V - Forward Voltage (mV) F Fig. 3 - Reverse Current vs. Junction Temperature Fig. 1 - Forward Current vs. Forward Voltage 30 5 f = 1 MHz 25 4 20 3 15 2 10 1 5 0 0 0 5 1015202530 0.0 0.5 1.0 1.5 2.0 16768 V - Reverse Voltage (V) R 16766 V - Forward Voltage (V) F Fig. 4 - Diode Capacitance vs. Reverse Voltage Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.8, 01-Jun-17 Document Number: 85630 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F I - Forward Current (A) F I - Reverse Current (A) R C - Diode Capacitance (pF) D