LS101A, LS101B, LS101C www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 APPLICATIONS Models Available HF-detector MECHANICAL DATA Protection circuit Case: QuadroMELF (SOD-80) Diode for low currents with a low supply voltage Weight: approx. 34 mg Small battery charger Cathode band color: black Power supplies Packaging codes/options: DC/DC converter for notebooks GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE CIRCUIT PART TYPE DIFFERENTIATION ORDERING CODE REMARKS CONFIGURATION LS101A V = 60 V, V at I = 1 mA max. 410 mV LS101A-GS18 or LS101A-GS08 Single Tape and reel R F F LS101B V = 50 V, V at I = 1 mA max. 400 mV LS101B-GS18 or LS101B-GS08 Single Tape and reel R F F LS101C V = 40 V, V at I = 1 mA max. 390 mV LS101C-GS18 or LS101C-GS08 Single Tape and reel R F F ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT LS101A V 60 V R Reverse voltage LS101B V 50 V R LS101C V 40 V R Peak forward surge current t = 10 s I 2A p FSM Repetitive peak forward current I 150 mA FRM Forward continuous current I 30 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Thermal resistance junction to ambient air R 320 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg Rev. 1.7, 01-Jun-17 Document Number: 85628 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000LS101A, LS101B, LS101C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL SYMBOL MIN. TYP. MAX. UNIT LS101A V 60 V (BR) Reverse breakdown voltage I = 10 A LS101B V 50 V R (BR) LS101C V 40 V (BR) V = 50 V LS101A I 200 nA R R Leakage current V = 40 V LS101B I 200 nA R R V = 30 V LS101C I 200 nA R R LS101A V 410 mV F I = 1 mA LS101B V 400 mV F F LS101C V 390 mV F Forward voltage drop LS101A V 1000 mV F I = 15 mA LS101B V 950 mV F F LS101C V 900 mV F LS101A C 2pF D Diode capacitance V = 0 V, f = 1 MHz LS101B C 2.1 pF R D LS101C C 2.2 pF D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10.00 100 T = 125 C j 10 1.00 T = 100 C j T = 75 C j 1 T = 50 C 0.10 j 0.1 T = 25 C j 0.01 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 10 1520 2530 3540 4550 V - Forward Voltage (V) 16204 V - Reverse Voltage (V) 16206 F R Fig. 3 - Forward Current vs. Forward Voltage Fig. 1 - Reverse Current vs. Reverse Voltage 2.0 T = 25 C 1.8 j 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 1015 2025 3035 4045 50 V - Reverse Voltage (V) 16205 R Fig. 2 - Diode Capacitance vs. Reverse Voltage Rev. 1.7, 01-Jun-17 Document Number: 85628 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 C - Diode Capacitance (pF) I - Reverse Current (A) D R I - Forward Current (mA) F