MPJC2CA150U40 Magnachip

MPJC2CA150U40 400V FRD Module MPJC2CA150U40 400V FRD Module General Description Features Ultra-FRD module devices are optimized to reduce losses Repetitive Reverse Voltage : V = 400V RRM and EMI/RFI in high frequency power conditioning electrical Low Forward Voltage : V (typ.) = 1.0V F systems. Average Forward Current : I (Av.)=150A T =100 F C These diode modules are ideally suited for power converters, Ultra-Fast Reverse Recovery Time : t (typ.) =35ns rr motors drives and other applications where switching losses Extensive Characterization of Recovery Parameters are significant portion of the total losses. Reduced EMI and RFI Non Isolation Type Package 175 Operating Junction Temperature Dual FRD Construction Applications High Speed & High Power converters, Welders Various Switching and Telecommunication Power Supply 3DM-2NI (Common Heat Sink) o Absolute Maximum Ratings Tc = 25 C (Per Leg) Characteristics Conditions Symbol Rating Unit Repetitive Peak Reverse Voltage V 400 V RRM Reverse DC Voltage V 320 V R(DC) o T =25 C 300 A C Average Forward Current Resistive Load I F(AV) o T =100 C 150 A C One Half Cycle at 60Hz, Surge(non-repetitive) Forward Current I 2750 A FSM Peak Value Value for One Cycle Current, 2 2 3 2 I t for Fusing I t 31.3* 10 A s t = 8.3ms, T= 25 Start w j Junction Temperature TJ -40 ~ 175 Maximum Power Dissipation P 620 W D Storage Temperature T -40 ~ 150 stg Mounting Torque(M6) - 4.0 N.m Terminal Torque(M6) Typical Including Screws - 3.0 N.m Weight - 95 g 1 Mar. 2013. Version 2.1 MagnaChip Semiconductor Ltd. MPJC2CA150U40 400V FRD Module o Electrical Characteristics Tc = 25 C(unless otherwise specified) Characteristics Conditions Symbol Min. Typ. Max. Unit Cathode Anode Breakdown Voltage I =100uA V 400 - - V R R T =25 - 1.0 1.3 C Diode Maximum Forward Voltage I =150A V V F FM T =100 - 0.9 - C T =100, c Diode Peak ReverseRecovery Current T =100 IRRM - - 1.0 mA C V applied RRM IF =1A,VR=30V Diode Reverse Recovery Time T =25 t - 35 50 ns C rr di/dt = -300A/uS T =25 - 80 - C I =150A,V =200V F R Diode Reverse Recovery Time t ns rr di/dt = -300A/uS T =100 - 110 - C Thermal Characteristics Characteristics Conditions Symbol Min. Typ. Max. Unit Thermal Resistance(Non-Isolation Type) Junction to Case R - - 0.24 /W th(j-c) 2 Mar. 2013. Version 2.1 MagnaChip Semiconductor Ltd.