333 3 LS4148, LS4448 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diodes Electrical data identical with the devices 1N4148 and 1N4448 respectively QuadroMELF package Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Extremely fast switches ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: QuadroMELF (SOD-80) Weight: approx. 34 mg Cathode band color: black Packaging codes / options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE TYPE CIRCUIT PART TYPE DIFFERENTIATION ORDERING CODE REMARKS MARKING CONFIGURATION LS4148 V = max. 1000 mV at I = 50 mA LS4148-GS18 or LS4148-GS08 - Single Tape and reel F F LS4448 V = max. 1000 mV at I = 100 mA LS4448GS18 or LS4448GS08 - Single Tape and reel F F ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM Reverse voltage V 75 V R Peak forward surge current t = 1 s I 2A p FSM Repetitive peak forward current I 500 mA FRM Forward continuous current I 300 mA F Average forward current V = 0 I 150 mA R F(AV) Power dissipation P 500 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Thermal resistance junction to ambient air R 300 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 2.1, 25-Feb-2020 Document Number: 85561 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D LS4148, LS4448 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 5 mA LS4448 V 0.620 0.720 V F F Forward voltage I = 50 mA LS4148 V 0.860 1 V F F I = 100 mA LS4448 V 0.930 1 V F F V = 20 V I 25 nA R R Reverse current V = 20 V, T = 150 C I 50 A R j R V = 75 V I 5A R R I = 100 A, t /T = 0.01, R p Breakdown voltage V 100 V (BR) t = 0.3 ms p Diode capacitance V = 0, f = 1 MHz, V = 50 mV C 4pF R HF D I = I = 10 mA, i = 1 mA t 8ns F R R rr Reverse recovery time I = 10 mA, V = 6 V, F R t 4ns rr i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 LS4148 T = 25 C 100 j 100 Scattering Limit 10 Scattering Limit 10 1 T = 25 C j 1 0.1 0 0.4 0.8 1.2 1.6 2.0 1 100 10 94 9098 V - Reverse Voltage (V) 16640 V - Forward Voltage (V) R F Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Reverse Current vs. Reverse Voltage 1000 3.0 LS4448 f = 1 MHz 2.5 T = 25 C 100 j 2.0 Scattering Limit 10 1.5 1.0 1 0.5 T = 25 C j 0 0.1 100 0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 16642 V - Forward Voltage (V) 94 9099 V - Reverse Voltage (V) F R Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 2.1, 25-Feb-2020 Document Number: 85561 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) I - Forward Current (mA) F F C - Diode Capacitance (pF) I - Reverse Current (nA) D R