M6035P, M6045P, M6060P www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES Power pack Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop 3 High forward surge capability 2 1 High frequency operation TO-3P (TO-247AD) Solder dip 275 C max.10 s, per JESD 22-B106 PIN 2 Material categorization: for definitions of compliance PIN 1 PIN 3 please see www.vishay.com/doc 99912 CASE TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switchin g mode power supplies, freewheeling diodes, DC/DC PRIMARY CHARACTERISTICS converters, or polarity protection application. I 2 x 30 A F(AV) V 35 V, 45 V, 60 V RRM MECHANICAL DATA I 350 A FSM Case: TO-3P (TO-247AD) V at I = 30 A 0.50 V, 0.56 V F F Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade T max. 150 C J Terminals: matte tin plated leads, solderable per Package TO-3P (TO-247AD) J-STD-002 and JESD 22-B102 Circuit configurations Common cathode E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL M6035P M6045P M6060P UNIT Maximum repetitive peak reverse voltage V 35 45 60 V RRM total device 60 Maximum average forward rectified current at (fig.1) I A F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave superimposed I 350 A FSM on rated load per diode Peak repetitive reverse current at t = 2 s, 1 kHz per diode I 2.0 A p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -65 to +150 C J STG Revision: 26-May-2020 Document Number: 88980 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 M6035P, M6045P, M6060P www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A M6035P M6045P M6060P UNIT PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. TYP. MAX. I = 10 A 0.42 - 0.43 - F I = 20 A T = 25 C 0.49 - 0.52 - F J I = 30 A 0.54 0.60 0.59 0.64 F (1) Instantaneous forward voltage per diode V V F I = 10 A 0.31 - 0.33 - F I = 20 A T = 125 C 0.42 - 0.47 - F J I = 30 A 0.50 0.55 0.56 0.60 F T = 25 C 135 600 240 600 A J (2) Reverse current per diode I V R R T = 125 C 110 160 140 160 mA J Typical junction capacitance C 4.0 V, 1 MHz 1150 - 1090 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL M6035P M6045P M6060P UNIT Typical thermal resistance per diode R 2.0 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE M6045P-E3/45 6.14 45 30/tube Tube M6060P-E3/45 6.14 45 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 70 16 Resistive or Inductive Load M6035P & M6045P D = 0.8 14 D = 0.5 60 D = 0.3 12 50 10 D = 1.0 40 D = 0.2 8 D = 0.1 30 6 T 20 4 10 2 D = t /T t p p 0 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 Case Temperature (C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 26-May-2020 Document Number: 88980 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)