MBR1090CT-E3, MBR10100CT-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier FEATURES Trench MOS Schottky technology TMBS Lower power losses, high efficiency TO-220AB Low forward voltage drop High forward surge capability High frequency operation Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 TYPICAL APPLICATIONS PIN 1 For use in high frequency rectifier of switching mode power PIN 2 supplies, freewheeling diodes, DC/DC converters or polarity CASE PIN 3 protection application MECHANICAL DATA Case: TO-220AB PRIMARY CHARACTERISTICS I 2 x 5.0 A Molding compound meets UL 94 V-0 flammability rating F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 90 V, 100 V RRM I 120 A Terminals: Matte tin plated leads, solderable per FSM J-STD-002 and JESD 22-B102 V 0.75 V F E3 suffix meets JESD 201 class 1A whisker test T max. 150 C J Polarity: As marked Package TO-220AB Diode variation Dual common cathode Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT Max. repetitive peak reverse voltage V 90 100 V RRM Working peak reverse voltage V 90 100 V RWM Max. DC blocking voltage V 90 100 V DC total device 10 Max. average forward rectified current at T = 105 C I A C F(AV) per diode 5.0 Peak forward surge current 8.3 ms single half sine-wave superimposed I 120 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 60 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C per diode I 0.5 A p J RRM Voltage rate of change (rated V) dV/dt 10 000V/s R Operating junction and storage temperature range T , T -65 to +150 C J STG Revision: 10-May-16 Document Number: 89125 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MBR1090CT-E3, MBR10100CT-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL MBR1090CT MBR10100CT UNIT I = 5.0 A T = 125 C 0.75 F C (1) Maximum instantaneous forward voltage per diode V V F I = 5.0 A T = 25 C 0.85 F C T = 25 C 100 A Maximum reverse current per diode at working peak J (2) I R reverse voltage T = 100 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT Typical thermal resistance per diode R 4.4 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR10100CT-E3/4W 1.87 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode 10 Resistive or Inductive Load 4.0 8 D = 0.8 3.5 D = 0.5 D = 0.3 6 3.0 D = 0.2 D = 1.0 2.5 D = 0.1 4 2.0 1.5 T 2 1.0 0 D = t /T t 0.5 p p 0 50 100 150 Case Temperature (C) 0 01 2 34 56 Fig. 1 - Forward Current Derating Curve Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Per Diode 120 T = T Max. J J 8.3 ms Single Half Sine-Wave 100 80 60 40 20 0 1 10 100 Number of Cycles at 60 Hz Revision: 10-May-16 Document Number: 89125 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Peak Forward Surge Current (A) Average Forward Current (A) Average Power Loss (W)