MBR1090-M3, MBR10100-M3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS Trench MOS Schottky technology TO-220AC Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance 2 please see www.vishay.com/doc 99912 1 TYPICAL APPLICATIONS PIN 1 For use in high frequency rectifier of switching mode power CASE PIN 2 supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA I 10 A F(AV) Case: TO-220AC V 90 V, 100 V RRM I 150 A Molding compound meets UL 94 V-0 flammability rating FSM Base P/N-M3 - halogen-free, RoHS-compliant, and V 0.65 V F commercial grade T max. 150 C J Terminals: Matte tin plated leads, solderable per Package TO-220AC J-STD-002 and JESD 22-B102 Diode variations Single die M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR1090MBR10100UNIT Maximum repetitive peak reverse voltage V 90 100 V RRM Working peak reverse voltage V 90 100 V RWM Maximum DC blocking voltage V 90 100 V DC Maximum average forward rectified current at T = 133 C I 10 A C F(AV) Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load Voltage rate of change (rated V) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -65 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT T = 25 C 0.80 C I = 10 A F (1) Maximum instantaneous forward voltage V 0.65 V F T = 125 C C I = 20 A 0.75 F T = 25 C 100 A Maximum reverse current per diode J (2) I R at working peak reverse voltage T = 100 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 10-May-16 Document Number: 89193 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MBR1090-M3, MBR10100-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR1090 MBR10100 UNIT R 60 JA Typical thermal resistance C/W R 2.0 JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR10100-M3/4W 1.845 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 10 100 Resistive or Inductive Load T = 150 C J 8 10 T = 125 C J 6 1 4 0.1 T = 25 C 2 J 0 0.01 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 160 100 T = 150 C T = T max. J J J 8.3 ms Single Half Sine-Wave 140 10 T = 125 C J 120 1 100 0.1 80 0.01 60 T = 25 C J 40 0.001 10 1 100 10 20 30 40 50 60 70 80 90 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics Revision: 10-May-16 Document Number: 89193 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Peak Forward Surge Current (A) Average Forward Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)