MBR10H150CT, MBRF10H150CT, SB10H150CT-1
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Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 A
FEATURES
TO-220AB ITO-220AB
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
3 High frequency operation
3
2
2
1
1
Solder dip 275 C max.10 s, per JESD 22-B106
MBR10H150CT MBRF10H150CT
Material categorization: for definitions of compliance
TO-262AA
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
MECHANICAL DATA
3
2
1
Case: TO-220AB, ITO-220AB, TO-262AA
SB10H150CT-1
Molding compound meets UL 94 V-0 flammability rating
PIN 1
PIN 2
Base P/N-E3 - RoHS-compliant, commercial grade
CASE
PIN 3
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
PRIMARY CHARACTERISTICS
E3 suffix meets JESD 201 class 1A whisker test
I 2 x 5 A
F(AV)
Polarity: As marked
V 150 V
RRM
Mounting Torque: 10 in-lbs maximum
I 160 A
FSM
V 0.72 V
F
T max. 175 C
J
Package TO-220AB, ITO-220AB, TO-262AA
Diode variations Common cathode
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL VALUE UNIT
Maximum repetitive peak reverse voltage V 150 V
RRM
Working peak reverse voltage V 150 V
RWM
Maximum DC blocking voltage V 150 V
DC
total device 10
Maximum average forward rectified current (fig.1) I A
F(AV)
per diode 5
Peak forward surge current 8.3 ms single half sine-wave superimposed on
I 160 A
FSM
rated load per diode
Peak repetitive reverse current per diode at t = 2 s, 1 kHz I 1.0 A
p RRM
Peak non-repetitive reverse surge energy per diode (8/20 waveform) E 10 mJ
RSM
Non-repetitve avalanche energy per diode at 25 C, I = 1.5 A, L = 10 mH E 11.25 mJ
AS AS
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
Operating junction and storage temperature range T , T -65 to +175 C
J STG
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min V 1500 V
AC
Revision: 11-Dec-14 Document Number: 88779
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000MBR10H150CT, MBRF10H150CT, SB10H150CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT
I = 5 A T = 25 C - 0.88
F J
I = 5 A T = 125 C - 0.72
F J
Maximum instantaneous forward voltage
(1)
V V
F
per diode
I = 10 A T = 25 C - 0.96
F J
I = 10 A T = 125 C - 0.80
F J
T = 25 C - 5.0 A
Maximum reverse current per diode at J
(2)
I
R
working peak reverse voltage
T = 125 C - 1.0 mA
J
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance per diode R 2.4 4.5 2.4 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR10H150CT-E3/45 2.06 45 50/tube Tube
ITO-220AB MBRF10H150CT-E3/45 2.20 45 50/tube Tube
TO-262AA SB10H150CT-1E3/45 1.58 45 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
12 200
MBR, MBRB
T = T Max.
J J
180
8.3 ms Single Half Sine-Wave
10
160
MBRF
140
8
120
6
100
80
4
60
40
2
20
0 0
25 50 75 100 125 150 175
1 10 100
Case Temperature (C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Derating Curve (Total) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 11-Dec-14 Document Number: 88779
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Current (A)
Peak Forward Surge Current (A)