VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
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Vishay Semiconductors
Schottky Rectifier, 1 A
FEATURES
Low profile, axial leaded outline
Very low forward voltage drop
Cathode Anode High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
DO-204AL
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Designed and qualified for commercial level
Package DO-204AL (DO-41)
Halogen-free according to IEC 61249-2-21 definition
I 1 A
F(AV)
(-M3 only)
V 50 V, 60 V
R
DESCRIPTION
V at I 0.65 V
F F
The VS-MBR... axial leaded Schottky rectifier has been
I max. 10.0 mA at 125 C
RM
optimized for very low forward voltage drop, with moderate
T max. 150 C
J
leakage. Typical applications are in switching power
Diode variation Single die
supplies, converters, freewheeling diodes, and reverse
battery protection.
E 2.0 mJ
AS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 1.0 A
F(AV)
V 50/60 V
RRM
I t = 5 s sine 150 A
FSM p
V 1 Apk, T = 125 C 0.65 V
F J
T Range - 40 to 150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR150 VS-MBR150-M3 VS-MBR160 VS-MBR160-M3 UNITS
Maximum DC reverse voltage V
R
50 50 60 60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
I 50 % duty cycle at T = 75 C, rectangular waveform 1.0
F(AV) C
See fig. 4
Maximum peak one cycle A
5 s sine or 3 s rect. pulse Following any rated load 150
non-repetitive surge current I condition and with rated
FSM
V applied
10 ms sine or 6 ms rect. pulse 25
See fig. 6 RRM
Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 4 mH 2.0 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 1.0 A
AR
Frequency limited by, T maximum V = 1.5 x V typical
J A R
Revision: 20-Sep-11 Document Number: 93439
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
1 A 0.75
2 A T = 25 C 0.9
J
3 A 1.0
Maximum forward voltage drop
(1)
V V
FM
See fig. 1
1 A 0.65
2 A T = 125 C 0.75
J
3 A 0.82
T = 25 C 0.5
J
Maximum reverse leakage current
(1)
I T = 100 C V = Rated V 5 mA
RM J R R
See fig. 2
T = 125 C 10
J
Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 55 pF
T R DC
Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
(1)
T , T - 40 to 150 C
J Stg
temperature range
Maximum thermal resistance, DC operation
(2)
R 80 C/W
thJL
junction to lead See fig. 4
0.33 g
Approximate weight
0.012 oz.
MBR150
Marking device Case style DO-204AL (DO-41)
MBR160
Notes
dP
tot 1
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT R
J thJA
(2)
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
Revision: 20-Sep-11 Document Number: 93439
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000