MBR2090CT-M3, MBR20100CT-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES Trench MOS Schottky technology TMBS Lower power losses, high efficiency TO-220AB Low forward voltage drop High forward surge capability High frequency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 TYPICAL APPLICATIONS 1 For use in high frequency rectifier of switching mode power PIN 1 PIN 2 supplies, freewheeling diodes, DC/DC converters or polarity PIN 3 CASE protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AB I 2 x 10 A Molding compound meets UL 94 V-0 flammability rating F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 90 V, 100 V RRM commercial grade I 150 A FSM Terminals: Matte tin plated leads, solderable per V 0.65 V F J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package TO-220AB Polarity: As marked Diode variation Common cathode M ounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR2090CT MBR20100CT UNIT Max. repetitive peak reverse voltage V 90 100 V RRM Working peak reverse voltage V 90 100 V RWM Max. DC blocking voltage V 90 100 V DC total device 20 Max. average forward rectified current at T = 133 C I A C F(AV) per diode 10 Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load per diode Voltage rate of change (rated V) dV/dt 10 000V/s R Operating junction and storage temperature range T , T -65 to +150 C J STG Revision: 11-May-16 Document Number: 89192 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MBR2090CT-M3, MBR20100CT-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT T = 25 C 0.80 C I = 10 A F (1) Max. instantaneous forward voltage per diode V 0.65 V F T = 125 C C I = 20 A 0.75 F T = 25 C 100 A J Max. reverse current per diode (2) I R at working peak reverse voltage T = 100 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS PARAMETER SYMBOL MBR2090CT, MBR20100CT UNIT R 60 JA Typical thermal resistance per diode C/W R 2.0 JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR20100CT-M3/4W 1.88 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 20 160 Resistive or Inductive Load T = T Max. J J 8.3 ms Single Half Sine-Wave 140 16 120 12 100 8 80 4 60 0 40 0 50 100 150 1 10 100 Number of Cycles at 60 Hz Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode Revision: 11-May-16 Document Number: 89192 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)