MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT
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Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB ITO-220AB
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
3
High forward surge capability
3
2
2
1
MBR20H90CT High frequency operation
1 MBRF20H90CT
MBR20H100CT
MBRF20H100CT
Meets MSL level 1, per J-STD-020, LF maximum peak of
PIN 1
PIN 2
PIN 1
PIN 2
245 C (for TO-263AB package)
CASE
PIN 3
PIN 3
Solder bath temperature 275 C maximum, 10 s, per
TO-263AB
JESD 22-B106 (for TO-220AB and ITO-220AB package)
K
AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
Material categorization: for definitions of compliance
2
please see www.vishay.com/doc?99912
1
MBRB20H90CT
TYPICAL APPLICATIONS
MBRB20H100CT
PIN 1 K
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters and
PIN 2 HEATSINK
polarity protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AB, ITO-220AB, TO-263AB
I 2 x 10 A
F(AV)
Molding compound meets UL 94 V-0 flammability rating
V 90 V to 100 V
RRM
Base P/N-E3 - RoHS-compliant, commercial grade
I 250 A
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
FSM
I 4.5 A
R
Terminals: Matte tin plated leads, solderable per
V 0.64
J-STD-002 and JESD 22-B102
F
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
T max. 175 C
J
meets JESD 201 class 2 whisker test
TO-220AB, ITO-220AB,
Package
TO-263AB
Polarity: As marked
Diode variations Dual common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL MBR20H90CT MBR20H100CT UNIT
Maximum repetitive peak reverse voltage V 90 100
RRM
Working peak reverse voltage V 90 100 V
RWM
Maximum DC blocking voltage V 90 100
DC
total device 20
Maximum average forward rectified current I
F(AV)
per diode 10
A
Peak forward surge current 8.3 ms single half sine-wave
I 250
FSM
superimposed on rated load
Peak repetitive reverse current per diode at t = 2.0 s, 1 kHz I 1.0
p RRM
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
Operating junction and storage temperature range T . T -65 to +175 C
J STG
Isolation voltage (ITO-220AB only)
V 1500 V
AC
from terminal to heatsink t = 1 min
Revision: 29-Jul-15 Document Number: 88673
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000MBR20HxxCT, MBRF20HxxCT, MBRB20HxxCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT
I = 10 A T = 25 C 0.77
F C
I = 10 A T = 125 C 0.64
F C
(1)
Maximum instantaneous forward voltage per diode V V
F
I = 20 A T = 25 C 0.88
F C
I = 20 A T = 125 C 0.73
F C
T = 25 C 4.5 A
J
Maximum reverse current at working peak reverse
(2)
I Rated V
R R
voltage per diode
T = 125 C 6.0 mA
J
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance per diode R 2.0 5.8 2.0 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR20H100CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF20H100CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB20H100CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB20H100CT-E3/81 1.35 81 800/reel Tape and reel
(1)
TO-220AB MBR20H100CTHE3/45 1.85 45 50/tube Tube
1)
ITO-220AB MBRF20H100CTHE3/45 1.99 45 50/tube Tube
(1)
TO-263AB MBRB20H100CTHE3/45 1.35 45 50/tube Tube
(1)
TO-263AB MBRB20H100CTHE3/81 1.35 81 800/reel Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 29-Jul-15 Document Number: 88673
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000