Switch-mode Power Rectifier 60 V, 20 A MBR20L60CTG MBRF20L60CTG www.onsemi.com Features and Benefits SCHOTTKY BARRIER Low Power Loss/High Efficiency High Surge Capacity RECTIFIER 20 A Total (10 A Per Diode Leg) 20 AMPERES GuardRing for Stress Protection 60 VOLTS These Devices are PbFree and are RoHS Compliant* 1 Applications 2, 4 Power Supply Output Rectification 3 Power Management Instrumentation MARKING 4 DIAGRAM Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V0 0.125 in TO220 Weight: 1.9 Grams (Approximately) CASE 221A AYWW Finish: All External Surfaces Corrosion Resistant and Terminal STYLE 6 B20L60G Leads are Readily Solderable AKA 1 2 Lead Temperature for Soldering Purposes: 3 260C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube AYWW TO220 FULLPAK B20L60G CASE 221D AKA 1 2 3 A = Assembly Location Y = Year WW = Work Week B20L60 = Device Code G = PbFree Package AKA = Polarity Designator ORDERING INFORMATION Device Package Shipping MBR20L60CTG TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please MBRF20L60CTG TO220FP 50 Units / Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 20120 Rev. 4 MBR20L60CT/DMBR20L60CTG MBRF20L60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) MBR20L60CT (Rated V ) T = 138C Per Diode 10 R C MBRF20L60CT (Rated V ) T = 123C Per Device 20 R C Nonrepetitive Peak Surge Current I 240 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T 55 to +150 C J Storage Temperature T 65 to +175 C stg ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Maximum Repetitive Peak Avalanche Voltage V 85 V ARM (t < 1 s, T < 150C, I < 51 A) p J AR Maximum SinglePulse Peak Avalanche Voltage V 85 V ASM (t < 1 s, T < 150C, I < 51 A) p J AR Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W MBR20L60CTG JunctiontoCase R 2.3 JC JunctiontoAmbient R 70 JA MBRF20L60CTG JunctiontoCase R 5.2 JC JunctiontoAmbient 75 R JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 10 A, T = 25C) 0.53 0.57 F C (I = 10 A, T = 125C) 0.49 0.54 F C (I = 20 A, T = 25C) 0.68 0.73 F C (I = 20 A, T = 125C) 0.64 0.69 F C Maximum Instantaneous Reverse Current (Note 2) i R (Rated DC Voltage, T = 25C) 118 380 A C (Rated DC Voltage, T = 125C) 52 96 mA C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2