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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MBR2535CT - MBR2560CT 25 A Schottky Barrier Rectifiers
June 2013
MBR2535CT - MBR2560CT
25 A Schottky Barrier Rectifiers
Features
Low Power Loss, High Efficiency
High Surge Capacity
PIN1
+
Metal Silicon Junction, Majority Carrier Conduction
High Current Capacity, Low Forward Voltage Drop
PIN3
CASE
Guard Ring for Over-Voltage Protection (OVP) PIN2
1
2
3
Applications
TO-220AB
Low-Voltage, High-Frequency Inverters
Free Wheeling and Polarity Protection
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Value
Symbol Parameter Units
2535CT 2545CT 2550CT 2560CT
V Maximum Repetitive Reverse Voltage 35 45 50 60 V
RRM
Average Rectified Forward Current
I 25 A
F(AV)
.375 inch Lead Length at T = 130C
A
Non-Repetitive Peak Forward Surge Current
I 200 A
FSM
8.3 ms Single Half-Sine-Wave
T Storage Temperature Range -65 to +175 C
STG
T Operating Junction Temperature Range -65 to +150 C
J
Thermal Characteristics
Symbol Parameter Value Units
P Power Dissipation 2.0 W
D
R Thermal Resistance, Junction to Ambient 60 C/W
JA
R Thermal Resistance, Junction to Lead 1.5 C/W
JL
2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR2535CT - MBR2560CT Rev. 1.3.0 1