MBR3035PT MBR30200PT Taiwan Semiconductor 30A, 35V - 200V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low power loss, high efficiency I 30 A F Guard ring for overvoltage protection V 35 - 200 V RRM High surge current capability UL Recognized File E-326243 I 200 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package TO-247AD (TO-3P) Configuration Dual dies APPLICATIONS Switching mode power supply (SMPS) Adapters Monitor DC to DC converters TV MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 1.13 N m maximum TO-247AD (TO-3P) Polarity: As marked Weight: 6.10g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR 3035 3045 3050 3060 3090 30100 30150 30200 PARAMETER SYMBOL UNIT PT PT PT PT PT PT PT PT MBR MBR MBR MBR MBR MBR MBR MBR Marking code on the device 3035 3045 3050 3060 3090 30100 30150 30200 PT PT PT PT PT PT PT PT Repetitive peak reverse V 35 45 50 60 90 100 150 200 V RRM voltage Reverse voltage, total rms V 24 31 35 42 63 70 105 140 V R(RMS) value Forward current I 30 A F Surge peak forward current 8.3ms single half sine wave I 200 A FSM superimposed on rated load Peak repetitive reverse surge I 2 1 A (1) RRM current Peak repetitive forward current (Rated V , Square I 30 A R FRM wave, 20KHz) Notes: 1. tp = 2.0s, 1.0KHz 1 Version: K2103 MBR3035PT MBR30200PT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR 3035 3045 3050 3060 3090 30100 30150 30200 PARAMETER SYMBOL UNIT PT PT PT PT PT PT PT PT Critical rate of rise of off-state dV/dt 10,000 V/s voltage Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 1.4 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT MBR3035PT - - V MBR3045PT MBR3050PT - 0.75 V MBR3060PT MBR3090PT I = 15A, T = 25C F J - 0.85 V MBR30100PT MBR30150PT - 0.95 V MBR30200PT - 1.05 V MBR3035PT - 0.82 V MBR3045PT MBR3050PT - - V MBR3060PT I = 30A, T = 25C MBR3090PT F J - - V MBR30100PT MBR30150PT - 1.02 V MBR30200PT - 1.10 V (1) Forward voltage per diode V F MBR3035PT - 0.60 V MBR3045PT MBR3050PT - 0.65 V MBR3060PT MBR3090PT I = 15A, T = 125C F J - 0.75 V MBR30100PT MBR30150PT - 0.92 V MBR30200PT - - V MBR3035PT - 0.73 V MBR3045PT MBR3050PT - - V MBR3060PT I = 30A, T = 125C MBR3090PT F J - - V MBR30100PT MBR30150PT - 0.98 V MBR30200PT - - V Notes: 1. Pulse test with PW = 0.3ms 2 Version: K2103