Switch-mode Power Rectifier 60 V, 30 A MBR30L60CTG, MBRF30L60CTG www.onsemi.com Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency SCHOTTKY BARRIER High Surge Capability RECTIFIER 30 A Total (15 A Per Diode Leg) 30 AMPERES, 60 VOLTS GuardRing for Stress Protection These Devices are PbFree and are RoHS Compliant 1 2, 4 Applications 3 Power Supply Output Rectification Power Management Instrumentation MARKING 4 DIAGRAMS Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V0 0.125 in TO220 Weight (Approximately): 1.9 Grams (TO220 & TO220FP) AYWW CASE 221A B30L60G Finish: All External Surfaces Corrosion Resistant and Terminal STYLE 6 AKA Leads are Readily Solderable 1 Lead Temperature for Soldering Purposes: 2 3 260C Max. for 10 Seconds AYWW B30L60G TO220 FULLPAK AKA CASE 221D 1 2 3 A = Assembly Location Y = Year WW = Work Week B30L60 = Device Code G = PbFree Device AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2019 Rev. 3 MBR30L60CT/DMBR30L60CTG, MBRF30L60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Per Leg) I 15 A F(AV) MBR30L60CTG (Rated V ) T = 133C (Per Device) 30 R C MBRF30L60CTG (Rated V ) T = 108C (Per Device) R C Nonrepetitive Peak Surge Current I 240 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T 55 to +150 C J Storage Temperature T 65 to +175 C stg ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W MBR30L60CTG JunctiontoCase R 2.1 JC JunctiontoAmbient R 70 JA MBRF30L60CTG JunctiontoCase R 5.0 JC JunctiontoAmbient R 75 JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 15 A, T = 25C) 0.57 0.62 F C (I = 15 A, T = 125C) 0.53 0.57 F C (I = 30 A, T = 25C) 0.75 0.81 F C (I = 30 A, T = 125C) 0.70 0.73 F C Maximum Instantaneous Reverse Current (Note 2) i R (Rated DC Voltage, T = 25C) 137 350 A C (Rated DC Voltage, T = 125C) 62 110 mA C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. DEVICE ORDERING INFORMATION Device Order Number Package Type Shipping MBR30L60CTG TO220 50 Units / Rail (PbFree) MBRF30L60CTG TO220FP 50 Units / Rail (PbFree) www.onsemi.com 2