X-On Electronics has gained recognition as a prominent supplier of MBR3035CT Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR3035CT Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBR3035CT Taiwan Semiconductor

MBR3035CT electronic component of Taiwan Semiconductor
Images are for reference only
See Product Specifications
Part No.MBR3035CT
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30A 35V
Datasheet: MBR3035CT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.7647 ea
Line Total: USD 764.7 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 20 Sep to Tue. 24 Sep
MOQ : 1000
Multiples : 1000
1000 : USD 0.7647
2500 : USD 0.7578
5000 : USD 0.7521
10000 : USD 0.7268
25000 : USD 0.7095

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the MBR3035CT from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR3035CT and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR3035CT thru MBR30150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AB MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - halogen-free Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 3035 3045 3050 3060 3090 30100 30150 UNIT CT CT CT CT CT CT CT Maximum repetitive peak reverse voltage V 35 45 50 60 90 100 150 V RRM Maximum RMS voltage V 24 31 35 42 63 70 105 V RMS Maximum DC blocking voltage V 35 45 50 60 90 100 150 V DC Maximum average forward rectified current I 30 A F(AV) Peak repetitive forward current I 30 A FRM (Rated VR, Square wave, 20KHz) Peak forward surge current, 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load Peak repetitive reverse surge current (Note 1) I 1.0 0.5 A RRM Maximum instantaneous forward voltage (Note 2) I =15A, T =25 0.7 0.77 0.84 0.95 F J I =15A, T =125 V F J 0.6 0.67 0.70 0.92 V F I =30A, T =25 F J 0.82 -0.94 1.02 I =30A, T =125 F J 0.73 - 0.82 0.98 0.2 0.1 Maximum reverse current rated VR T =25 J I mA R T =125 J 15 10 7.5 5 Voltage rate of change (Rated V ) dV/dt 10000 V/s R O Typical thermal resistance R 1.0 1.5 JC C/W O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 STG C Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Document Number: DS D1308040 Version: J13MBR3035CT thru MBR30150CT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 GREEN COMPOUND PACKING CODE PACKAGE PACKING PART NO. QUALIFIED CODE MBR30xxCT Prefix C0 Suffix TO-220AB 50 / Tube Note 1:x defines voltage from 35V (MBR3035CT) to 150V (MBR30150CT) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PACKING CODE DESCRIPTION PART NO. QUALIFIED CODE MBR3060CT C0 MBR3060CT C0 MBR3060CT C0G C0 G Green compound MBR3060CT MBR3060CTHC0 MBR3060CT H C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 35 300 30 8.3ms Single Half Sine Wave JEDEC Method 250 25 200 20 150 15 100 10 RESISTIVE OR INDUCTIVELOAD 5 WITH HEATSINK 50 0 0 0 50 100 150 1 10 100 o CASE TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL REVERSE CHARACTERISTICS PER LEG FIG. 3- TYPICAL INSTANTANEOUS FORWARD 100 CHARACTERISTICS PER LEG MBR3035CT-MBR3045CT 100 MBR3050CT-MBR30150CT MBR3035CT-MBR3045CT 10 TJ=125 MBR3050CT-MBR3060CT 10 1 TJ=75 0. 1 1 MBR30150CT TJ=25 0. 01 MBR3090CT-MBR30100CT 0. 1 0. 001 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 1 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1308040 Version: J13 AVERAGE FORWARD A IF-INSTANTANEOUS FORWARD CURRENT (A) CURRENT (A) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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