MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier Low Leakage Current 5.0 A FEATURES TO-220AB ITO-220AB Power pack Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop High frequency operation Solder dip 275 C max. 10 s, per JESD 22-B106 3 3 2 2 1 1 Material categorization: For definitions of compliance MBR30H150CT MBRF30H150CT please see www.vishay.com/doc 99912 TO-262AA TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, and SB30H150CT-1 polarity protection application. PIN 1 PIN 2 CASE PIN 3 MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA 3 2 1 Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per PRIMARY CHARACTERISTICS J-STD-002 and JESD 22-B102 I 2 x 15 A F(AV) E3 suffix meets JESD 201 class 1A whisker test V 150 V RRM Polarity: As marked I 260 A FSM Mounting Torque: 10 in-lbs maximum V 0.75 V F T 175 C J TO-220AB, ITO-220AB, Package TO-262AA Diode variations Dual Common Cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR30H150CT MBRF30H150CT SB30H150CT-1 UNIT Maximum repetitive peak reverse voltage V 150 V RRM Working peak reverse voltage V 150 V RWM Maximum DC blocking voltage V 150 V DC total device 30 Maximum average forward rectified current I A F(AV) per diode 15 Peak forward surge current 8.3 ms single half sine-wave I 260 A FSM superimposed on rated load per diode Peak repetitive reverse current per diode at t = 2 s, 1 kHz I 1.0 A p RRM Peak non-repetitive reverse surge energy per diode E 10 mJ RSM (8/20 s waveform) Non-repetitve avalanche energy per diode at 25 C, E 20 mJ AS I = 2 A, L = 10 mH AS Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T - 65 to + 175 C J STG Isolation voltage (ITO-220AB only) from terminals to V 1500 V AC heatsink t = 1 min Revision: 13-Aug-13 Document Number: 88865 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MBR30H150CT, MBRF30H150CT, SB30H150CT-1 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT I = 15 A T = 25 C 0.90 F C I = 15 A T = 125 C 0.75 F C Maximum instantaneous forward voltage (1) V V F per diode I = 30 A T = 25 C 0.99 F C I = 30 A T = 125 C 0.86 F C T = 25 C 5.0 A Maximum reverse current per diode at J (1) I R working peak reverse voltage T = 125 C 1.0 mA J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance per diode R 1.7 4.0 1.7 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR30H150CT-E3/45 2.06 45 50/tube Tube ITO-220AB MBRF30H150CT-E3/45 2.20 45 50/tube Tube TO-262AA SB30H150CT-1E3/45 1.58 45 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 40 280 T = T Max. J J 35 240 8.3 ms Single Half Sine-Wave MBR, MBRB 30 200 MBRF 25 160 20 120 15 80 10 40 5 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve (Total) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 13-Aug-13 Document Number: 88865 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)