MBR4060PT-E3 Vishay

MBR4035PT thru MBR4060PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop 3 2 High forward surge capability 1 High frequency operation TO-247AD (TO-3P) Solder Dip 260 C, 40 seconds PIN 2 PIN 1 Component in accordance to RoHS 2002/95/EC PIN 3 CASE and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, free-wheeling diodes, MAJOR RATINGS AND CHARACTERISTICS dc-to-dc converters or polarity protection application. I 40 A F(AV) V 35 V to 60 V MECHANICAL DATA RRM I 400 A Case: TO-247AD (TO-3P) FSM V 0.60 V, 0.62 V Epoxy meets UL 94V-0 flammability rating F T max. 150 C j Terminals: Matte tin plated (E3 Suffix) leads, solderable per J-STD-002B and JESD22-B102D Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT Maximum repetitive peak reverse voltage V 35 45 50 60 V RRM Maximum working peak reverse voltage V 35 45 50 60 V RWM Maximum DC blocking voltage V 35 45 50 60 V DC Maximum average forward rectified current at T = 125 C I 40 A C F(AV) Peak forward surge current, 8.3 ms single I 400 A FSM half sine-wave superimposed on rated load per diode (1) Peak repetitive reverse surge current per diode I 2.0 1.0 A RRM ) dv/dt 10000 V/s Voltage rate of change at (rated V R Operating junction temperature range T - 65 to + 150 C J Storage temperature range T - 65 to + 175 C STG Note: (1) 2.0 s pulse width, f = 1.0 kHz Document Number 88679 www.vishay.com 22-Aug-06 1MBR4035PT thru MBR4060PT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT I = 20 A, T = 25 C 0.70 0.72 F C Maximum instantaneous I = 20 A, T = 125 C 0.60 0.62 F C V V (1) F forward voltage per diode I = 40 A, T = 25 C 0.80 - F C I = 40 A, T = 125 C 0.75 - F C Maximum instantaneous T = 25 C 1.0 C reverse current at rated DC I mA R T = 125 C 100 (1) C blocking voltage per diode Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLMBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT Maximum thermal resistance from junction to case per R 1.2 C/W JC diode ORDERING INFORMATION PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD MBR4045PT-E3/45 6.13 45 30/Tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 50 400 Resistive or Inductive Load Tj = Tj max. 8.3 ms Single Half Sine-Wave 40 300 30 20 200 10 0 100 0 50 100 150 10 1 100 Number of Cycles at 60 Hz Case Temperature (C) Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com Document Number 88679 2 22-Aug-06 Average Forward Current (A) Peak Forward Surge Current (A)