MBR(F,B)735 thru MBR(F,B)760
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Vishay General Semiconductor
Schottky Barrier Rectifier
FEATURES
TO-220AC ITO-220AC
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
2
2
Meets MSL level 1, per J-STD-020, LF maximum peak of
1
1
245 C (for TO-263AB package)
MBR7xx
MBRF7xx
PIN 1 Solder bath temperature 275 C maximum, 10 s, per
PIN 1
JESD 22-B106 (for TO-220AC and ITO-220AC package)
CASE
PIN 2
PIN 2
AEC-Q101 qualified
TO-263AB
Material categorization: For definitions of compliance
K
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
2
1
For use in low voltage, high frequency rectifier of switching
MBRB7xx
mode power supplies, freewheeling diodes, DC/DC
PIN 1 K
converters and polarity protection application.
PIN 2 HEATSINK
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
I 7.5 A
F(AV)
Base P/N-E3 - RoHS-compliant, commercial grade
V 35 V to 60 V
RRM
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
I 150 A
FSM
Terminals: Matte tin plated leads, solderable per
V 0.57 V, 0.65 V
F
J-STD-002 and JESD 22-B102
T max. 150 C
J
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
C
PARAMETER SYMBOL MBR735 MBR745 MBR750 MBR760 UNIT
Maximum repetitive peak reverse voltage V 35 45 50 60
RRM
Working peak reverse voltage V 35 45 50 60 V
RWM
Maximum DC blocking voltage V 35 45 50 60
DC
Maximum average forward rectified current (Fig. 1) I 7.5
F(AV)
Peak forward surge current 8.3 ms single half sine-wave
I 150 A
FSM
superimposed on rated load
Peak repetitive reverse surge current at t = 2.0 s, 1 kHz I 1.0 0.5
p RRM
Voltage rate of change (rated V ) dV/dt 10 000
R
Operating junction temperature range T - 65 to + 150
J
C
Operating storage temperature range T - 65 to + 175
STG
Isolation voltage (ITO-220AC only)
V 1500 V
AC
from terminal to heatsink t = 1 min
Revision: 14-Jun-12 Document Number: 88680
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000MBR(F,B)735 thru MBR(F,B)760
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
PARAMETER SYMBOL TEST CONDITIONS MBR735 MBR745 MBR750 MBR760 UNIT
I = 7.5 A T = 25 C - 0.75
F C
I = 7.5 A T = 125 C 0.57 0.65
F C
(1)
Maximum instantaneous forward voltage V V
F
I = 15 A T = 25 C 0.84 -
F C
I = 15 A T = 125 C 0.72 -
F C
T = 25 C 0.1 0.5
C
Maximum reverse current at
(2)
I Rated V mA
R R
DC blocking voltage
T = 125 C 15 50
C
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance from junction to case R 3.0 5.0 3.0 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC MBR745-E3/45 1.80 45 50/tube Tube
ITO-220AC MBRF745-E3/45 1.94 45 50/tube Tube
TO-263AB MBRB745-E3/45 1.33 45 50/tube Tube
TO-263AB MBRB745-E3/81 1.33 81 800/reel Tape and reel
(1)
TO-220AC MBR745HE3/45 1.80 45 50/tube Tube
1)
ITO-220AC MBRF745HE3/45 1.94 45 50/tube Tube
(1)
TO-263AB MBRB745HE3/45 1.33 45 50/tube Tube
(1)
TO-263AB MBRB745HE3/81 1.33 81 800/reel Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 14-Jun-12 Document Number: 88680
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000