X-On Electronics has gained recognition as a prominent supplier of MBRB10100-E3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBRB10100-E3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBRB10100-E3/4W Vishay

MBRB10100-E3/4W electronic component of Vishay
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Part No.MBRB10100-E3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 10 Amp 100 Volt 150 Amp IFSM
Datasheet: MBRB10100-E3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4375 ea
Line Total: USD 1.44 
Availability - 5522
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5522
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4375
10 : USD 0.9717
100 : USD 0.6831
500 : USD 0.5808
1000 : USD 0.5796

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the MBRB10100-E3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRB10100-E3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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333 3 MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor High Voltage TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES TO-220AC ITO-220AC Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 1 1 MBR1090 MBRF1090 245 C (for TO-263AB package) MBR10100 MBRF10100 PIN 1 Solder bath temperature 275 C maximum, 10 s, per PIN 1 JESD 22-B106 (for TO-220AC and ITO-220AC package) CASE PIN 2 PIN 2 TO-263AB Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 K TYPICAL APPLICATIONS 2 For use in high frequency rectifier of switching mode power 1 supplies, freewheeling diodes, DC/DC converters or polarity MBRB1090 protection application. MBRB10100 PIN 1 K PIN 2 HEATSINK MECHANICAL DATA 2 Case: TO-220AC, ITO-220AC, D PAK (TO-263AB) LINKS TO ADDITIONAL RESOURCES Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 3D Models Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test PRIMARY CHARACTERISTICS Polarity: as marked I 10 A F(AV) Mounting Torque: 10 in-lbs maximum V 90 V, 100 V RRM I 150 A FSM V 0.65 V F T max. 150 C J 2 Package TO-220AC, ITO-220AC, D PAK (TO-263AB) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR1090 MBR10100 UNIT Maximum repetitive peak reverse voltage V 90 100 V RRM Working peak reverse voltage V 90 100 V RWM Maximum DC blocking voltage V 90 100 V DC Maximum average forward rectified current at T = 133 C I 10 A C F(AV) Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load Non-repetitive avalanche energy at T = 25 C, L = 60 mH E 130 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, p I 0.5 A RRM T = 38 C 2 C per diode J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -65 to +150 C J STG Revision: 17-Mar-2021 Document Number: 89034 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL MAX. UNIT I = 10 A T = 25 C 0.80 F C (1) Maximum instantaneous forward voltage I = 10 A T = 125 C V 0.65 V F C F I = 20 A T = 125 C 0.75 F C T = 25 C 100 A J Maximum reverse current per at working peak (2) I R reverse voltage T = 125 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBRMBRFMBRBUNIT R 60 - 60 JA Typical thermal resistance C/W R 2.0 3.5 2.0 JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR10100-E3/4W 1.845 4W 50/tube Tube ITO-220AC MBRF10100-E3/4W 1.661 4W 50/tube Tube TO-263AB MBRB10100-E3/4W 1.384 4W 50/tube Tube TO-263AB MBRB10100-E3/8W 1.384 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 10 160 Resistive or Inductive Load T = T max. J J 8.3 ms Single Half Sine-Wave 140 8 120 6 100 4 80 2 60 40 0 50 150 0 100 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 17-Mar-2021 Document Number: 89034 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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