MBR(F,B)1035 thru MBR(F,B)1060 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier FEATURES Low power loss, high efficiency TO-220AC ITO-220AC Low forward voltage drop High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 2 2 Solder bath temperature 275 C maximum, 10 s, per 1 1 JESD 22-B106 (for TO-220AC and ITO-220AC package) MBR10xx MBRF10xx PIN 1 AEC-Q101 qualified PIN 1 CASE PIN 2 Material categorization: For definitions of compliance PIN 2 TO-263AB please see www.vishay.com/doc 99912 K TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching 2 mode power supplies, freewheeling diodes, DC/DC 1 converters, and polarity protection application. MBRB10xx PIN 1 K MECHANICAL DATA PIN 2 HEATSINK Case: TO-220AC, ITO-220AC, TO-263AB Molding compound meets UL 94-V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade PRIMARY CHARACTERISTICS Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified I 10 A F(AV) Terminals: Matte tin plated leads, solderable per V 35 V, 60 V RRM J-STD-002 and JESD 22-B102 I 150 A FSM E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix V 0.57 V, 0.70 V F meets JESD 201 class 2 whisker test T max. 150 C J Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR1035 MBR1045 MBR1050 MBR1060 UNIT Maximum repetitive peak reverse voltage V 35 45 50 60 V RRM Maximum average forward rectified current (Fig.1) I 10 A F(AV) Peak forward surge current 8.3 ms single half I 150 FSM sine-wave superimposed on rated load A Peak repetitive reverse current at t = 2.0 s, 1 kHz I 1.0 0.5 p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R T - 65 to + 150 J Operating junction and storage temperature range C - 65 to + 175 T STG Isolation voltage (ITO-220AC only) V 1500 V AC from terminal to heatsink t = 1 min Revision: 13-Jun-12 Document Number: 88669 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MBR(F,B)1035 thru MBR(F,B)1060 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MBR1535 MBR1545 MBR1550 MBR1560 UNIT I = 10 A T = 25 C - 0.80 F J I = 10 A T = 125 C 0.57 0.70 F J (1) Maximum instantaneous forward voltage V V F I = 20 A T = 25 C 0.84 0.95 F J I = 20 A T = 125 C 0.72 0.85 F J T = 25 C 0.10 J Maximum instantaneous reverse current (2) I Rated V mA R R at DC blocking voltage T = 125 C 15 J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance from juntion to case R 2.0 4.0 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR1045-E3/45 1.80 45 50/tube Tube ITO-220AC MBRF1045-E3/45 1.94 45 50/tube Tube TO-263AB MBRB1045-E3/45 1.33 45 50/tube Tube TO-263AB MBRB1045-E3/81 1.33 81 800/reel Tape and reel (1) TO-220AC MBR1045HE3/45 1.80 45 50/tube Tube (1) ITO-220AC MBRF1045HE3/45 1.94 45 50/tube Tube (1) TO-263AB MBRB1045HE3/45 1.33 45 50/tube Tube (1) TO-263AB MBRB1045HE3/81 1.33 81 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 13-Jun-12 Document Number: 88669 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000