VS-MBRB1035PbF, VS-MBRB1045PbF
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Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
FEATURES
Base 150 C T operation
J
cathode
2
TO-220 and D PAK packages
2
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
3
2 1
TO-263AB (D PAK)
strength and moisture resistance
N/C Anode
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
PRODUCT SUMMARY
of 260 C
2
Package TO-263AB (D PAK)
AEC-Q101 qualified
I 10 A
F(AV)
Material categorization: for definitions of compliance
V 35 V, 45 V please see www.vishay.com/doc?99912
R
V at I 0.57 V
F F
DESCRIPTION
I max. 15 mA at 125 C
RM
This Schottky rectifier has been optimized for low reverse
T max. 150 C
J
leakage at high temperature. The proprietary barrier
Diode variation Single die
technology allows for reliable operation up to 150 C
junction temperature. Typical applications are in switching
E 8.0 mJ
AS
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 10
F(AV)
A
I T = 135 C 20
FRM C
V 35, 45 V
RRM
I t = 5 s sine 1060 A
FSM p
V 10 A , T = 125 C 0.57 V
F pk J
T Range -65 to +150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOLVS-MBRB1035PbFVS-MBRB1045PbFUNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I T = 135 C, rated V 10
F(AV) C R
Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 135 C 20
FRM R C
Following any rated load
A
5 s sine or 3 s rect. pulse condition and with rated V 1060
RRM
Non-repetitive surge current I
FSM
applied
Surge applied at rated load conditions halfwave, single phase, 60 Hz 150
Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 4 mH 8 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 2A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 05-Aug-14 Document Number: 94302
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-MBRB1035PbF, VS-MBRB1045PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
20 A T = 25 C 0.84
J
(1)
Maximum forward voltage drop V 10 A 0.57 V
FM
T = 125 C
J
20 A 0.72
T = 25 C 0.1
J
Maximum instantaneous reverse
I (1) Rated DC voltage mA
RM
current
T = 125 C 15
J
Threshold voltage V 0.354 V
F(TO)
T = T maximum
J J
Forward slope resistance r 17.6 m
t
Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 600 pF
T R DC
Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum junction temperature range T -65 to +150
J
C
Maximum storage temperature range T -65 to +175
Stg
Maximum thermal resistance,
R DC operation 2.0
thJC
junction to case
C/W
Typical thermal resistance, Mounting surface, smooth and greased
R 0.50
thCS
case to heatsink (Only for TO-220)
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
MBRB1035
2
Marking device Case style D PAK
MBRB1045
Revision: 05-Aug-14 Document Number: 94302
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000