MBR(F,B)10H90, MBR(F,B)10H100 www.vishay.com Vishay General Semiconductor High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AC ITO-220AC Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current High forward surge capability 2 High frequency operation 2 1 Meets MSL level 1, per J-STD-020, LF maximum peak of 1 MBR10H90 MBRF10H90 MBR10H100 245 C (for TO-263AB package) MBRF10H100 PIN 1 PIN 1 Solder bath temperature 275 C maximum, 10 s, per CASE PIN 2 PIN 2 JESD 22-B106 (for TO-220AC and ITO-220AC package) TO-263AB AEC-Q101 qualified K Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 2 TYPICAL APPLICATIONS 1 MBRB10H90 For use in high frequency rectifier of switching mode power MBRB10H100 supplies, freewheeling diodes, DC/DC converters or polarity PIN 1 K protection application. PIN 2 HEATSINK MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB PRIMARY CHARACTERISTICS Molding compound meets UL 94-V-0 flammability rating I 10 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 90 V, 100 V Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified RRM I 250 A Terminals: Matte tin plated leads, solderable per FSM J-STD-002 and JESD 22-B102 V 0.64 V F E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix I 4.5 A R meets JESD 201 class 2 whisker test T max. 175 C J Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR10H90 MBR10H100 UNIT Maximum repetitive peak reverse voltage V 90 100 RRM 90 100 Working peak reverse voltage V V RWM Maximum DC blocking voltage V 90 100 DC Maximum average forward rectified current I 10 F(AV) Peak forward surge current 8.3 ms single half sine-wave I 250 A FSM superimposed on rated load Peak repetitive reverse current at t = 2.0 s, 1 kHz I 0.5 p RRM Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T - 65 to 175 C J STG Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V 1500 V AC Revision: 13-Jun-12 Document Number: 88667 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000MBR(F,B)10H90, MBR(F,B)10H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT I = 10 A T = 25 C 0.77 F C I = 10 A T = 125 C 0.64 F C (1) Maximum instantaneous forward voltage V V F I = 20 A T = 25 C 0.88 F C I = 20 A T = 125 C 0.73 F C T = 25 C 4.5 A J (2) Maximum reverse current I Rated V R R T = 125 C 6.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL MBR MBRF MBRB UNIT Typical thermal resistance R 2.7 5.8 2.7 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR10H100-E3/45 1.80 45 50/tube Tube ITO-220AC MBRF10H100-E3/45 1.94 45 50/tube Tube TO-263AB MBRB10H100-E3/45 1.33 45 50/tube Tube TO-263AB MBRB10H100-E3/81 1.33 81 800/reel Tape and reel (1) TO-220AC MBR10H100HE3/45 1.80 45 50/tube Tube (1) ITO-220AC MBRF10H100HE3/45 1.94 45 50/tube Tube (1) TO-263AB MBRB10H100HE3/45 1.33 45 50/tube Tube (1) TO-263AB MBRB10H100HE3/81 1.33 81 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 13-Jun-12 Document Number: 88667 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000