MBR750 C0 Taiwan Semiconductor

MBR735 thru MBR7150 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AC MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - halogen-free Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.85 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL UNIT 735 745 750 760 790 7100 7150 V Maximum repetitive peak reverse voltage 35 45 50 60 90 100 150 V RRM Maximum RMS voltage V 24 31 35 42 63 70 105 V RMS Maximum DC blocking voltage V 35 45 50 60 90 100 150 V DC Maximum average forward rectified current I 7.5 A F(AV) Peak repetitive forward current I 15 A FRM (Rated VR, Square Wave, 20KHz) Peak forward surge current, 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load Peak repetitive reverse surge current (Note 1) I 1 0.5 A RRM Maximum instantaneous forward voltage (Note 2) I =7.5 A, T =25 - 0.75 0.92 0.95 F J I =7.5 A, T =125 V 0.57 0.65 0.82 V F J F 0.92 I =15 A, T =25 F J 0.84 -- - I =15 A, T =125 F J 0.72 -- - 0.1 Maximum reverse current rated VR T =25 J I mA R T =125 J 15 10 5 Voltage rate of change (Rated V ) 10000 dV/dt V/s R R JC 5 O Typical thermal resistance C/W 15 R JA O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +175 STG C Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Document Number: DS D1308048 Version: J13MBR735 thru MBR7150 Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 GREEN COMPOUND PACKING CODE PACKAGE PACKING PART NO. QUALIFIED CODE MBR7xx Prefix C0 Suffix TO-220AC 50 / Tube (Note 1) Note 1:x defines voltage from 35V (MBR735) to 150V (MBR7150) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PACKING CODE DESCRIPTION PART NO. QUALIFIED CODE MBR760 C0 C0 MBR760 MBR760 C0G MBR760 C0 G Green compound MBR760HC0 H C0 AEC-Q101 qualified MBR760 RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 175 8.3ms Single Half Sine Wave JEDEC Method 150 8 125 6 RESISTIVE OR 100 INDUCTIVELOAD 4 WITH HEATSINK 75 2 MBR735-MBR745 50 MBR750-MBR7150 0 25 0 50 100 150 1 10 100 o CASE TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 100 MBR735-745 MBR750-7150 Pulse Width=300s 1% Duty Cycle 10 10 TJ=125 TJ=125 1 1 TJ=25 0. 1 TJ=75 0. 1 MBR735-MBR745 0. 01 MBR750-MBR760 MBR790-MBR7150 TJ=25 0. 001 0. 01 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 1 1. 1 1. 2 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1308048 Version: J13 AVERAGE FORWARD A INSTANTANEOUS FORWARD CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) PEAK FORWARD SURGE CURRENT (A)