X-On Electronics has gained recognition as a prominent supplier of MBR60H100CTG Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR60H100CTG Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBR60H100CTG ON Semiconductor

MBR60H100CTG electronic component of ON Semiconductor
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Part No.MBR60H100CTG
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 60A 100V H-Series
Datasheet: MBR60H100CTG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.8181 ea
Line Total: USD 16.36 
Availability - 0
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 20
Multiples : 20
20 : USD 0.8181
50 : USD 0.7617
200 : USD 0.7052
500 : USD 0.7052
2000 : USD 0.677

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 307
Multiples : 307
307 : USD 1.1755

0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 3.6045
10 : USD 3.1394
50 : USD 2.8637
100 : USD 2.5843
500 : USD 2.455
1000 : USD 2.3968

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 7.1458
10 : USD 2.5787
100 : USD 2.0609

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.2702
3 : USD 2.9581
8 : USD 2.144
21 : USD 2.0218

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6
Multiples : 1
6 : USD 2.0299

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 6
Multiples : 1
6 : USD 1.4692

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
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Cnhts
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Mxhts
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We are delighted to provide the MBR60H100CTG from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR60H100CTG and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G Switch-mode Power Rectifier www.onsemi.com 100 V, 60 A SCHOTTKY BARRIER Features and Benefits RECTIFIER Low Forward Voltage: 0.72 V 125C 60 AMPERES, 100 VOLTS Low Power Loss/High Efficiency High Surge Capacity 1 175C Operating Junction Temperature 2, 4 3 60 A Total (30 A Per Diode Leg) NRVB Prefix for Automotive and Other Applications Requiring 4 MARKING Unique Site and Control Change Requirements AECQ101 DIAGRAM Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant TO220 Applications CASE 221A Power Supply Output Rectification AYWW STYLE 6 B60H100G Power Management A K A 1 Instrumentation 2 3 Mechanical Characteristics: Case: Epoxy, Molded 2 D PAK3 AYWW CASE 418B Epoxy Meets UL 94 V0 0.125 in B60H100G STYLE 3 AKA Weight (Approximately): 1.9 Grams (TO220) 2 1.7 Grams (D PAK3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: A = Assembly Location Y = Year 260C Max. for 10 Seconds WW = Work Week ESD Rating: Human Body Model = 3B B60H100 = Device Code Machine Model = C G = PbFree Package AKA = Polarity Designator ORDERING INFORMATION Device Package Shipping MBR60H100CTG TO220 50 Units/Rail (PbFree) 2 MBRB60H100CTT4G D PAK3 800/ (PbFree) Tape & Reel 2 NRVBB60H100CTT4G D PAK3 800/ (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2017 Rev. 7 MBR60H100CT/DMBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 155C) Per Diode 30 C Per Device 60 Peak Repetitive Forward Current I 60 A FRM (Square Wave, 20 kHz, T = 151C) C Nonrepetitive Peak Surge Current I 350 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature Range (Note 1) T 55 to +175 C J Storage Temperature Range T 65 to +175 C stg Voltage Rate of Change (Rated V ) dV/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 9 and 10) W 400 mJ AVAL ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W JunctiontoCase (Min. Pad) R 1.0 JC JunctiontoAmbient (Min. Pad) R 70 JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 30 A, T = 25C) 0.80 0.84 F J (i = 30 A, T = 125C) 0.68 0.72 F J (i = 60 A, T = 25C) 0.93 0.98 F J (i = 60 A, T = 125C) 0.81 0.84 F J Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 125C) 2.0 10 J (Rated DC Voltage, T = 25C) 0.0013 0.01 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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