MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES Power pack Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop 3 High forward surge capability 2 1 High frequency operation TO-3P (TO-247AD) Solder dip 275 C max.10 s, per JESD 22-B106 PIN 2 Material categorization: for definitions of compliance PIN 1 PIN 3 please see www.vishay.com/doc 99912 CASE TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in low voltage, high frequency rectifier of switchin g I 40 A mode power supplies, freewheeling diodes, DC/DC F(AV) converters, or polarity protection application. V 35 V, 45 V, 50 V, 60 V RRM I 400 A FSM MECHANICAL DATA V 0.60 V, 0.62 V F Case: TO-3P (TO-247AD) T max. 150 C J Molding compound meets UL 94 V-0 flammability rating Package TO-3P (TO-247AD) Base P/N-E3 - RoHS-compliant, commercial grade Circuit configuration Common cathode Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLMBR4035PTMBR4045PTMBR4050PTMBR4060PTUNIT Maximum repetitive peak reverse voltage V 35 45 50 60 V RRM Maximum working peak reverse voltage V 35 45 50 60 V RWM Maximum DC blocking voltage V 35 45 50 60 V DC Maximum average forward rectified current T = 125 C I 40 A C F(AV) Peak forward surge current 8.3 ms single half I 400 A FSM sine-wave superimposed on rated load per diode (1) Peak repetitive reverse surge current per diode I 2.0 1.0 A RRM Voltage rate of change (rated V) dV/dt 10 000 V/s R Operating junction temperature range T -65 to +150 C J Storage temperature range T -65 to +175 C STG Note (1) 2.0 s pulse width, f = 1.0 kHz Revision: 27-May-2020 Document Number: 88679 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT I = 20 A T = 25 C 0.70 0.72 F J I = 20 A T = 125 C 0.60 0.62 F J Maximum instantaneous forward (1) V V F voltage per diode I = 40 A T = 25 C 0.80 - F J I = 40 A T = 125 C 0.75 - F J Maximum instantaneous reverse T = 25 C 1.0 J (1) current at rated DC blocking voltage I mA R T = 125 C 100 per diode J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT Thermal resistance, junction to case R 1.2 C/W JC per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD MBR4045PT-E3/45 6.13 45 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 50 400 T = T Max. J J Resistive or Inductive Load 8.3 ms Single Half Sine-Wave 40 300 30 20 200 10 0 100 150 10 0 50 100 1 100 Number of Cycles at 60 Hz Case Temperature (C) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 27-May-2020 Document Number: 88679 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)