VS-MBR4045WT-N3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A Base FEATURES common cathode 150 C T operation J 2 Very low forward voltage drop High frequency operation High purity, high temperature epoxy 1 encapsulation for enhanced mechanical 2 strength and moisture resistance 3 Guard ring for enhanced ruggedness and long term 13 Anode Anode reliability TO-247AC 3L 2 Common Designed and qualified according to JEDEC -JESD 47 cathode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION I 2 x 20 A F(AV) The VS-MBR4045WT... center tap Schottky rectifier has V 45 V R been optimized for very low forward voltage drop, with V at I 0.56 V F F moderate leakage. The proprietary barrier technology allows I max. 85 mA at 125 C RM for reliable operation up to 150 C junction temperature. T max. 150 C J Typical applications are in switching power supplies, E 20 mJ AS converters, freewheeling diodes, and reverse battery Package TO-247AC 3L protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform (per device) 40 F(AV) A I T = 125 C (per leg) 40 FRM C V 45 V RRM I t = 5 s sine 1020 A FSM p V 20 A , T = 125 C 0.56 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBR4045WT-N3 UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 20 Maximum average I T = 125 C, 50 % duty cycle, rectangular waveform F(AV) C forward current per device 40 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 125 C 40 FRM R C A 5 s sine or 3 s rect. pulse Following any rated load 1020 Maximum peak one cycle non-repetitive I condition and with rated FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse 265 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 3 A, L = 4.40 mH 20 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 3A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 03-Jan-18 Document Number: 96466 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR4045WT-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A 0.59 T = 25 C J 40 A 0.78 (1) Maximum forward voltage drop V V FM 20 A 0.56 T = 125 C J 40 A 0.72 T = 25 C 1.75 J Maximum instantaneous reverse current I (1) T = 100 C Rated DC voltage 50 mA RM J T = 125 C 85 J Threshold voltage V 0.29 V F(TO) T = T maximum J J Forward slope resistance r 10.3 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 900 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 7.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction temperature range T -55 to 150 J C Maximum storage temperature range T -55 to 175 Stg Maximum thermal resistance, R DC operation 1.4 thJC junction to case per package C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.7 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Device marking Case style TO-247AC 3L MBR4045WT Revision: 03-Jan-18 Document Number: 96466 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000