Switch Mode Power Rectifier MBR3045WTG These stateoftheart devices use the Schottky Barrier principle with a platinum barrier metal. Features www.onsemi.com Dual Diode Construction Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating SCHOTTKY BARRIER Guardring for Stress Protection RECTIFIER Low Forward Voltage 30 AMPERES, 45 VOLTS 175C Operating Junction Temperature Popular TO247 Package These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 2 Compliant* 4 3 Mechanical Characteristics Case: Epoxy, Molded Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 1 260C Max. for 10 Seconds TO247 2 CASE 340AL 3 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage V 45 V MARKING DIAGRAM RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 105C) Per Device 30 R C Per Diode 15 MBR3045WT Peak Repetitive Forward Current, I 30 A FRM AYWWG (Rated V , Square Wave, 20 kHz) R Per Diode NonRepetitive Peak Surge Current I 200 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) I 2.0 A Peak Repetitive Reverse Current (2.0 s, RRM 1.0 kHz) Per Diode (See Figure 6) A = Assembly Location Y = Year Storage Temperature Range T 65 to +175 C stg WW = Work Week Operating Junction Temperature (Note 1) T 65 to +175 C J G = PbFree Package Peak Surge Junction Temperature T 175 C J(pk) (Forward Current Applied) Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from MBR3045WTG TO247 30 Units/Rail JunctiontoAmbient: dP /dT < 1/R . D J JA (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2021 Rev. 6 MBR3045WT/DMBR3045WTG THERMAL CHARACTERISTICS (Per Diode) Rating Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.4 C/W JC JunctiontoAmbient R 40 JA ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 2) v V F (i = 20 Amps, T = 125C) 0.62 F C (i = 30 Amps, T = 125C) 0.72 F C (i = 30 Amps, T = 25C) 0.76 F C Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 100 C (Rated dc Voltage, T = 25C) 1.0 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. TYPICAL CHARACTERISTICS 100 50 100 T = 150C 30 J 20 T = 150C J 125C 25C 10 10 100C 5.0 3.0 1.0 75C 2.0 1.0 0.1 0.5 0.3 25C 0.2 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5.0 10 15 20 25 30 35 40 45 50 v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F I , REVERSE CURRENT (mA) R