X-On Electronics has gained recognition as a prominent supplier of MBR30H60CTG Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. MBR30H60CTG Diodes - General Purpose, Power, Switching are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

MBR30H60CTG ON Semiconductor

MBR30H60CTG electronic component of ON Semiconductor
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Part No.MBR30H60CTG
Manufacturer: ON Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 30A60V H-SERIES
Datasheet: MBR30H60CTG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
509: USD 1.0084 ea
Line Total: USD 513.28 
Availability - 0
MOQ: 509  Multiples: 509
Pack Size: 509
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2347
10 : USD 1.2061
125 : USD 0.9992
750 : USD 0.6852
1500 : USD 0.6281

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 509
Multiples : 509
509 : USD 1.0084

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Operating Temperature Range
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBR30H60CTG from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR30H60CTG and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG MBRB30H60CT 1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 159C 15 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) 30 R Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 260 Operating Junction Temperature (Note 1) T 55 to +175 C J Storage Temperature T 55 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 11 and 12) W 350 mJ AVAL ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W (MBRB30H60CT1G and MBR30H60CTG) Junction toCase 2.0 R JC Junction toAmbient 70 R JA (MBRF30H60CTG and MBRJ30H60CTG) Junction toCase R 4.4 JC (MBRB30H60CTT4G and NRVBB30H60CTT4G) Junction toCase R 1.6 JC ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 15 A, T = 25C) 0.62 F C (I = 15 A, T = 125C) 0.56 F C (I = 30 A, T = 25C) 0.78 F C (I = 30 A, T = 125C) 0.71 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 0.3 C (Rated DC Voltage, T = 125C) 45 C 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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