Switchmode Power Rectifier 100 V, 30 A MBR30H100CTG, MBRF30H100CTG www.onsemi.com Features and Benefits SCHOTTKY BARRIER Low Forward Voltage: 0.67 V 125C Low Power Loss/High Efficiency RECTIFIER High Surge Capacity 30 AMPERES 175C Operating Junction Temperature 100 VOLTS 30 A Total (15 A Per Diode Leg) 1 These are PbFree Devices 2, 4 Applications 3 Power Supply Output Rectification Power Management MARKING DIAGRAMS Instrumentation 4 Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V0 0.125 in TO220 Weight: 1.9 Grams (Approximately) CASE 221A AYWW STYLE 6 B30H100G Finish: All External Surfaces Corrosion Resistant and Terminal AKA Leads are Readily Solderable Lead Temperature for Soldering Purposes: 1 2 3 260C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C AYWW TO220 FULLPAK B30H100G CASE 221D AKA 1 2 3 A = Assembly Location Y = Year WW = Work Week B30H100 = Device Code G = PbFree Package AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2020 Rev. 7 MBR30H100CT/DMBR30H100CTG, MBRF30H100CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 156C) Per Diode 15 C Per Device 30 Peak Repetitive Forward Current I 30 A FM (Square Wave, 20 kHz, T = 151C) C Nonrepetitive Peak Surge Current I 250 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 13 and 14) W 200 mJ AVAL ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W (MBR30H100CTG) Junction-to-Case R 2.0 JC Junction-to-Ambient R 60 JA (MBRF30H100CTG) Junction-to-Case 4.2 R JC Junction-to-Ambient 75 R JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 15 A, T = 25C) 0.76 0.80 F J (i = 15 A, T = 125C) 0.64 0.67 F J (i = 30 A, T = 25C) 0.88 0.93 F J (i = 30 A, T = 125C) 0.76 0.80 F J Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 125C) 1.1 6.0 J (Rated DC Voltage, T = 25C) 0.0008 0.0045 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Order Number Package Type Shipping MBR30H100CTG TO220 50 Units / Rail (PbFree) MBRF30H100CTG TO220FP 50 Units / Rail (PbFree) www.onsemi.com 2