MBR30H100MFS, NRVB30H100MFS Switch-mode Power Rectifiers These stateoftheart devices have the following features: www.onsemi.com Features Low Power Loss / High Efficiency SCHOTTKY BARRIER New Package Provides Capability of Inspection and Probe After RECTIFIERS Board Mounting 30 AMPERES Guardring for Stress Protection 100 VOLTS Low Forward Voltage Drop 175C Operating Junction Temperature Wettable Flacks Option Available 1,2,3 5,6 NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING Qualified and PPAP Capable DIAGRAM These are PbFree and HalideFree Devices A C 1 Mechanical Characteristics: A B30H10 SO8 FLAT LEAD AYWZZ Case: Epoxy, Molded A CASE 488AA C STYLE 2 Not Used Epoxy Meets Flammability Rating UL 940 0.125 in. Lead Finish: 100% Matte Sn (Tin) B30H10 = Specific Device Code Lead and Mounting Surface Temperature for Soldering Purposes: A = Assembly Location 260C Max. for 10 Seconds Y = Year Device Meets MSL 1 Requirements W = Work Week ZZ = Lot Traceability Applications Output Rectification in Compact Portable Consumer Applications ORDERING INFORMATION Freewheeling Diode used with Inductive Loads Device Package Shipping Telecom Power Conversion MBR30H100MFST1G SO8 FL 1500 / Automotive Freewheeling Diode (PbFree) Tape & Reel MBR30H100MFST3G SO8 FL 5000 / (PbFree) Tape & Reel NRVB30H100MFST1G SO8 FL 1500 / (PbFree) Tape & Reel NRVB30H100MFST3G SO8 FL 5000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2015 Rev. 2 MBR30H100MFS/DMBR30H100MFS, NRVB30H100MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 100 R Average Rectified Forward Current I 30 A F(AV) (Rated V , T = 140C) R C Peak Repetitive Forward Current, I 60 A FRM (Rated V , Square Wave, 20 kHz, T = 135C) R C NonRepetitive Peak Surge Current I 300 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 100 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RJA. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 1.6 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 15 A, T = 125C) 0.58 0.72 F J (i = 15 A, T = 25C) 0.71 0.76 F J (i = 30 A, T = 125C) 0.66 0.86 F J (i = 30 A, T = 25C) 0.81 0.90 F J Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 125C) 5 15 J (Rated dc Voltage, T = 25C) 0.005 0.1 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2