X-On Electronics has gained recognition as a prominent supplier of MBR30H30CTG Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. MBR30H30CTG Small Signal Switching Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

MBR30H30CTG ON Semiconductor

MBR30H30CTG electronic component of ON Semiconductor
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Part No.MBR30H30CTG
Manufacturer: ON Semiconductor
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 30A/30V H-SERIES TO-220
Datasheet: MBR30H30CTG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.3 ea
Line Total: USD 2.3 
Availability - 242
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
242
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.3
10 : USD 1.311
100 : USD 1.1615
500 : USD 1.012
1000 : USD 0.9303
5000 : USD 0.8958

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
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We are delighted to provide the MBR30H30CTG from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR30H30CTG and other electronic components in the Small Signal Switching Diodes category and beyond.

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MBRB30H30CT-1G, NRVBB30H30CT-1G, MBR30H30CTG Switch-mode Power Rectifiers 30 V, 30 A www.onsemi.com Features and Benefits SCHOTTKY BARRIER Low Forward Voltage RECTIFIER Low Power Loss/High Efficiency 30 AMPERES, 30 VOLTS High Surge Capacity 1 150C Operating Junction Temperature 2, 4 30 A Total (15 A Per Diode Leg) 3 GuardRing for Stress Protection NRVBB Prefix for Automotive and Other Applications Requiring 4 MARKING Unique Site and Control Change Requirements AECQ101 DIAGRAMS Qualified and PPAP Capable 2 These Devices are PbFree and are RoHS Compliant I PAK (TO262) AYWW CASE 418D Applications B30H30G STYLE 3 AKA Power Supply Output Rectification Power Management 1 2 3 Instrumentation 4 Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V0 0.125 in TO220 2 Weight: 1.5 Grams (I PAK) (Approximately) AYWW CASE 221A B30H30G 1.9 Grams (TO220) (Approximately) STYLE 6 AKA Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 1 2 Lead Temperature for Soldering Purposes: 3 260C Max. for 10 Seconds A = Assembly Location Y = Year WW = Work Week B30H30 = Device Code G = PbFree Package AKA = Diode Polarity ORDERING AND MARKING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 6 MBRB30H30CT1/DMBRB30H30CT1G, NRVBB30H30CT1G, MBR30H30CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 138C 15 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) 30 R Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 260 Operating Junction Temperature (Note 1) T 55 to +150 C J Storage Temperature T 55 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 9 and 10) W 250 mJ AVAL ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance C/W JunctiontoCase R 2.0 JC JunctiontoAmbient 70 R JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 15 A, T = 25C) 0.48 F C (I = 15 A, T = 125C) 0.40 F C (I = 30 A, T = 25C) 0.55 F C (I = 30 A, T = 125C) 0.53 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 0.8 C (Rated DC Voltage, T = 125C) 130 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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