X-On Electronics has gained recognition as a prominent supplier of MBRF10H150CTG Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. MBRF10H150CTG Small Signal Switching Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

MBRF10H150CTG ON Semiconductor

Hot MBRF10H150CTG electronic component of ON Semiconductor
MBRF10H150CTG ON Semiconductor
MBRF10H150CTG Small Signal Switching Diodes
MBRF10H150CTG  Semiconductors

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Part No. MBRF10H150CTG
Manufacturer: ON Semiconductor
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 10A 150V
Datasheet: MBRF10H150CTG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
261: USD 0.2491 ea
Line Total: USD 65.02 
Availability - 135
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 261  Multiples: 1
Pack Size: 1
Availability Price Quantity
135
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 261
Multiples : 1
261 : USD 0.2491

339
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 1.1863
10 : USD 0.735
100 : USD 0.6138
500 : USD 0.5896
11200 : USD 0.5753

   
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Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBRF10H150CTG from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRF10H150CTG and other electronic components in the Small Signal Switching Diodes category and beyond.

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Switch-mode Power Rectifier 150 V, 10 A MBRF10H150CTG Features and Benefits www.onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability SCHOTTKY BARRIER 10 A Total (5 A Per Diode Leg) RECTIFIER GuardRing for Stress Protection 10 AMPERES, 150 VOLTS This is a PbFree Device Applications 1 Power Supply Output Rectification 2, 4 Power Management 3 Instrumentation Mechanical Characteristics: MARKING Case: Epoxy, Molded DIAGRAM Epoxy Meets UL 94 V0 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable AYWW TO220 FULLPAK Lead Temperature for Soldering Purposes: B10H150G CASE 221D 260C Max. for 10 Seconds AKA 1 MAXIMUM RATINGS 2 3 Please See the Table on the Following Page A = Assembly Location Y = Year WW = Work Week B10H150 = Device Code G = PbFree Device AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2019 Rev. 3 MBRF10H150CT/DMBRF10H150CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 150 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Per Leg) I 5 A F(AV) (Rated V ) T = 142C (Per Device) 10 R C Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T 20 to +150 C J Storage Temperature T 65 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10000 V/ s R ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance JunctiontoCase R 2.5 C/W JC ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 5 A, T = 25C) 0.85 F C (I = 5 A, T = 125C) 0.63 0.69 F C Maximum Instantaneous Reverse Current (Note 2) i R (Rated DC Voltage, T = 25C) 45 A C (Rated DC Voltage, T = 125C) 20 mA C 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. DEVICE ORDERING INFORMATION Device Order Number Package Type Shipping MBRF10H150CTG TO220FP 50 Units / Rail (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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