Switch-mode Schottky Power Rectifier MBRF20200CTG The Switchmode Power Rectifier employs the Schottky Barrier principle in a large area metal to silicon power diode. Stateoftheart geometry features epitaxial construction with oxide www.onsemi.com passivation and metal overlay contact. Ideally suited for use as rectifiers in very lowvoltage, highfrequency switching power SCHOTTKY BARRIER supplies, free wheeling diodes and polarity protection diodes. RECTIFIER Features 20 AMPERES, 200 VOLTS Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop 1 Matched Dual Die Construction 2 3 High Junction Temperature Capability High dv/dt Capability Guardring for Stress Protection Epoxy Meets UL 94 V0 0.125 in Electrically Isolated. No Isolation Hardware Required. These Devices are PbFree and are RoHS Compliant Mechanical Characteristics: Case: Epoxy, Molded 1 2 Weight: 1.9 Grams (Approximately) 3 Finish: All External Surfaces Corrosion Resistant and Terminal TO220 FULLPAK Leads are Readily Solderable CASE 221D Lead Temperature for Soldering Purposes: MARKING DIAGRAM 260C Max. for 10 Seconds AYWW B20200G A K A A = Assembly Location Y = Year WW = Work Week B20200 = Device Code G = PbFree Package AKA = Polarity Designator ORDERING INFORMATION Device Package Shipping *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques MBRF20200CTG TO220 50 Units/Rail Reference Manual, SOLDERRM/D. (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2020 Rev. 9 MBRF20200CT/DMBRF20200CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 200 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current Per Leg I 10 A F(AV) (Rated V ) T = 125C Per Package 20 R C Peak Repetitive Forward Current, Per Leg (Rated V , Square Wave, 20 kHz) T = 90C I 20 A R C FRM Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Operating Junction Temperature and Storage Temperature T , T 65 to +150 C J stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Leg) Rating Symbol Value Unit Thermal Resistance, JunctiontoCase 3.5 C/W R JC ELECTRICAL CHARACTERISTICS (Per Leg) Rating Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (i = 10 Amp, T = 25C) 0.9 F C (i = 10 Amp, T = 125C) 0.8 F C (i = 20 Amp, T = 25C) 1.0 F C (i = 20 Amp, T = 125C) 0.9 F C Maximum Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 25C) 1.0 C (Rated dc Voltage, T = 125C) 50 C DYNAMIC CHARACTERISTICS (Per Leg) Capacitance (V = 5.0 V, T = 25C, Freq. = 1.0 MHz) C 500 pF R C T 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% 100 10,000 T = 150 C 70 J 1,000 50 T = 125 C J T = 150C J 100 T = 100 C J 20 10 T = 125C J 1 10 7 0.1 T = 100C J T = 25 C J 5 0.01 0 20 40 60 80 100 120 140 160 180 200 T = 25C V , REVERSE CURRENT (VOLTS) J R 2 Figure 2. Typical Reverse Current (Per Leg) 1 0.2 0.4 0.6 0.8 1 v , INSTANTANEOUS VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage (Per Leg) www.onsemi.com 2 I , INSTANEOUS FORWARD CURRENT (AMP) F I , REVERSE CURRENT ( A) R