Switch-mode Power Rectifier 150 V, 20 A MBRF20H150CTG, MBR20H150CTG www.onsemi.com Features and Benefits SCHOTTKY BARRIER Low Forward Voltage Low Power Loss/High Efficiency RECTIFIER High Surge Capability 20 AMPERES, 150 VOLTS 20 A Total (10 A Per Diode Leg) GuardRing for Stress Protection 1 2, 4 These Devices are PbFree and are RoHS Compliant 3 Applications Power Supply Output Rectification 4 Power Management Instrumentation Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V0 0.125 in Weight (Approximately): 1.9 Grams (TO220 & TO220FP) 1 1 2 2 3 3 Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable TO220 FULLPAK TO220 Lead Temperature for Soldering Purposes: CASE 221D CASE 221A STYLE 6 260C Max. for 10 Seconds MARKING DIAGRAMS AYWW AYWW B20H150G B20H150G AKA AKA TO220 TO220FP A = Assembly Location Y = Year WW = Work Week B20H150 = Device Code G = PbFree Device AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information on page 1 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2020 Rev. 5 MBRF20H150CT/DMBRF20H150CTG, MBR20H150CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 150 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Per Leg) I 10 A F(AV) (Rated V ) T = 134C (Per Device) 20 R C Nonrepetitive Peak Surge Current I 180 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T 20 to +150 C J Storage Temperature T 65 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance C/W (MBR20H150CTG) JunctiontoCase R 2.0 JC JunctiontoAmbient R 45 JA (MBRF20H150CTG) JunctiontoCase R 2.5 JC ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 5 A, T = 25C) 0.72 F C (I = 5 A, T = 125C) 0.57 0.60 F C (I = 10 A, T = 25C) 0.87 F C (I = 10 A, T = 125C) 0.65 0.68 F C Maximum Instantaneous Reverse Current (Note 2) i R (Rated DC Voltage, T = 25C) 50 A C (Rated DC Voltage, T = 125C) 30 mA C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Order Number Package Type Shipping MBRF20H150CTG TO220FP 50 Units / Rail (PbFree) MBR20H150CTG TO220 50 Units / Rail (PbFree) www.onsemi.com 2