MBR30H150CT, MBRF30H150CT, SB30H150CT-1
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Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 A
FEATURES
TO-220AB ITO-220AB
Power pack
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High frequency operation
Solder dip 275 C max. 10 s, per JESD 22-B106
3
3
2
2
1 1
Material categorization: For definitions of compliance
MBR30H150CT MBRF30H150CT
please see www.vishay.com/doc?99912
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
SB30H150CT-1
polarity protection application.
PIN 1
PIN 2
CASE
PIN 3
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
3
2
1
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
PRIMARY CHARACTERISTICS
J-STD-002 and JESD 22-B102
I 2 x 15 A
F(AV)
E3 suffix meets JESD 201 class 1A whisker test
V 150 V
RRM
Polarity: As marked
I 260 A
FSM
Mounting Torque: 10 in-lbs maximum
V 0.75 V
F
T 175 C
J
TO-220AB, ITO-220AB,
Package
TO-262AA
Diode variations Dual Common Cathode
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
C
PARAMETER SYMBOL MBR30H150CT MBRF30H150CT SB30H150CT-1 UNIT
Maximum repetitive peak reverse voltage V 150 V
RRM
Working peak reverse voltage V 150 V
RWM
Maximum DC blocking voltage V 150 V
DC
total device 30
Maximum average forward rectified current I A
F(AV)
per diode 15
Peak forward surge current 8.3 ms single half sine-wave
I 260 A
FSM
superimposed on rated load per diode
Peak repetitive reverse current per diode at t = 2 s, 1 kHz I 1.0 A
p RRM
Peak non-repetitive reverse surge energy per diode
E 10 mJ
RSM
(8/20 s waveform)
Non-repetitve avalanche energy per diode at 25 C,
E 20 mJ
AS
I = 2 A, L = 10 mH
AS
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
Operating junction and storage temperature range T , T - 65 to + 175 C
J STG
Isolation voltage (ITO-220AB only) from terminals to
V 1500 V
AC
heatsink t = 1 min
Revision: 13-Aug-13 Document Number: 88865
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT
I = 15 A T = 25 C 0.90
F C
I = 15 A T = 125 C 0.75
F C
Maximum instantaneous forward voltage
(1)
V V
F
per diode
I = 30 A T = 25 C 0.99
F C
I = 30 A T = 125 C 0.86
F C
T = 25 C 5.0 A
Maximum reverse current per diode at J
(1)
I
R
working peak reverse voltage
T = 125 C 1.0 mA
J
Note
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance per diode R 1.7 4.0 1.7 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR30H150CT-E3/45 2.06 45 50/tube Tube
ITO-220AB MBRF30H150CT-E3/45 2.20 45 50/tube Tube
TO-262AA SB30H150CT-1E3/45 1.58 45 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 C unless otherwise noted)
A
40 280
T = T Max.
J J
35
240
8.3 ms Single Half Sine-Wave
MBR, MBRB
30
200
MBRF
25
160
20
120
15
80
10
40
5
0 0
25 50 75 100 125 150 175 1 10 100
Case Temperature (C) Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve (Total) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 13-Aug-13 Document Number: 88865
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Current (A)
Peak Forward Surge Current (A)