MBR30H60CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AB
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
3
High frequency operation
2
Solder bath temperature 275 C maximum, 10 s, per
1
JESD 22-B106
MBR30H60CT
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1
PIN 2
CASE TYPICAL APPLICATIONS
PIN 3
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
PRIMARY CHARACTERISTICS
converters, or polarity protection application.
I 2 x 15 A
F(AV)
MECHANICAL DATA
V 60 V
RRM
Case: TO-220AB
I 150 A
FSM
Molding compound meets UL 94 V-0 flammability rating
V 0.59 V
F
Base P/N-E3 - RoHS-compliant, commercial grade
I 60 A
R Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
T max. 175 C
J
E3 suffix meets JESD 201 class 1A whisker test
Package TO-220AB
Polarity: as marked
Circuit configuration Common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOLMBR30H60CT UNIT
Maximum repetitive peak reverse voltage V 60 V
RRM
Working peak reverse voltage V 60 V
RWM
Maximum DC blocking voltage V 60 V
DC
total device 30
Maximum average forward rectified current (fig. 1) I A
F(AV)
per diode 15
Peak forward surge current 8.3 ms single half sine-wave superimposed
I 150 A
FSM
on rated load per diode
Peak repetitive reverse surge current per diode at t = 2 s, 1 kHz I 0.5 A
p RRM
Peak non-repetitive reverse energy (8/20 s waveform) E 20 mJ
RSM
Non-repetitive avalanche energy per diode at 25 C, I = 4 A, L = 10 mH E 80 mJ
AS AS
Electrostatic discharge capacitor voltage human body model:
V 25 kV
C
C = 100 pF, R = 1.5 k
Voltage rate of change (rated V) dV/dt 10 000V/s
R
Operating junction and storage temperature range T , T -65 to +175 C
J STG
Revision: 25-May-2018 Document Number: 88866
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H60CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL MBR30H60CT UNIT
I = 15 A T = 25 C -0.68
F C
I = 15 A T = 125 C 0.55 0.59
F C
Maximum instantaneous forward voltage
(1)
V V
F
per diode
I = 30 A T = 25 C - 0.83
F C
I = 30 A T = 125 C 0.68 0.71
F C
T = 25 C -60 A
J
Maximum reverse current per diode at
(2)
I
R
working peak reverse voltage
T = 125 C 4.0 15 mA
J
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL MBR UNIT
Typical thermal resistance junction to case
R 1.5 C/W
JC
per diode
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR30H60CT-E3/45 1.85 45 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
40 150
T = T Max.
J J
8.3 ms Single Half Sine-Wave
125
30
100
20 75
50
10
25
0 0
0 25 50 75 100 125 150 175 1 10 100
Case Temperature (C) Number of Cycles at 60 Hz
Fig. 1 - Forward Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 25-May-2018 Document Number: 88866
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Current (A)
Peak Forward Surge Current (A)